NTB4302T4G
- Mfr.Part #
- NTB4302T4G
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 74A D2PAK
- Stock
- 7,758
- In Stock :
- 7,758
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 74A
- Pbfree Code :
- yes
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 28nC @ 4.5V
- Published :
- 2005
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Pin Count :
- 3
- Number of Terminations :
- 2
- Drain to Source Breakdown Voltage :
- 30V
- Case Connection :
- DRAIN
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Fall Time (Typ) :
- 35 ns
- Rise Time :
- 22ns
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- RoHS Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Input Capacitance (Ciss) (Max) @ Vds :
- 2400pF @ 24V
- Mounting Type :
- Surface Mount
- Voltage - Rated DC :
- 30V
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 80W Tc
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Gate to Source Voltage (Vgs) :
- 20V
- Avalanche Energy Rating (Eas) :
- 722 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 74A Tc
- Turn-Off Delay Time :
- 45 ns
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 9.3m Ω @ 37A, 10V
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation :
- 80W
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Pulsed Drain Current-Max (IDM) :
- 175A
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Current Rating :
- 74A
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Datasheets
- NTB4302T4G

N-Channel Tape & Reel (TR) 9.3m Ω @ 37A, 10V ±20V 2400pF @ 24V 28nC @ 4.5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTB4302T4G Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 722 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2400pF @ 24V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 45 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 175A, its maximum pulsed drain current.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
NTB4302T4G Features
the avalanche energy rating (Eas) is 722 mJ
a continuous drain current (ID) of 74A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 45 ns
based on its rated peak drain current 175A.
NTB4302T4G Applications
There are a lot of ON Semiconductor
NTB4302T4G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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