NTB45N06L

Manufacturer :

onsemi

Product Category :

Unclassified

Continuous Drain Current (ID) :

45A

Voltage - Rated DC :

60V

Pbfree Code :

yes

Turn-Off Delay Time :

36 ns

JESD-30 Code :

R-PSSO-G2

HTS Code :

8541.29.00.95

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

150A

Terminal Finish :

Tin (Sn)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Avalanche Energy Rating (Eas) :

240 mJ

Drain to Source Breakdown Voltage :

60V

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.028Ohm

Vgs (Max) :

±15V

Packaging :

Tube

Rise Time :

341ns

Qualification Status :

Not Qualified

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

45A Ta

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Number of Pins :

3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time (Typ) :

158 ns

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Rds On (Max) @ Id, Vgs :

28m Ω @ 22.5A, 5V

Current Rating :

45A

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

125W

Vgs(th) (Max) @ Id :

2V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

5V

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Published :

2005

Time@Peak Reflow Temperature-Max (s) :

40

Gate to Source Voltage (Vgs) :

15V

Number of Terminations :

2

Element Configuration :

Single

JESD-609 Code :

e3

Terminal Form :

Gull wing

Power Dissipation-Max :

2.4W Ta 125W Tj