NTB4302T4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

80W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2.4pF @ 24V

RoHS Status :

Non-RoHS Compliant

Terminal Position :

Single

Terminal Finish :

TIN LEAD

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

9.3m Ω @ 37A, 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

30V

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

74A

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Case Connection :

DRAIN

JESD-609 Code :

e0

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Pbfree Code :

No

Terminal Form :

Gull wing

Number of Elements :

1

Drain to Source Voltage (Vdss) :

30V

Surface Mount :

yes

Qualification Status :

COMMERCIAL

Gate Charge (Qg) (Max) @ Vgs :

28nC @ 4.5V

Current - Continuous Drain (Id) @ 25°C :

74A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

235

Drain-source On Resistance-Max :

0.0093Ohm

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

722 mJ

Pulsed Drain Current-Max (IDM) :

175A