NDS8936

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

DS Breakdown Voltage-Min :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Qualification Status :

COMMERCIAL

Drain-source On Resistance-Max :

0.035Ohm

Drain Current-Max (Abs) (ID) :

5.3A

FET Feature :

Logic Level Gate

Vgs(th) (Max) @ Id :

2.8V @ 250μA

Drain to Source Voltage (Vdss) :

30V

Current - Continuous Drain (Id) @ 25°C :

5.3A

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Transistor Element Material :

SILICON

Terminal Finish :

MATTE TIN

Transistor Application :

SWITCHING

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

8

Number of Terminations :

8

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-G8

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

20A

Power - Max :

900mW

Input Capacitance (Ciss) (Max) @ Vds :

720pF @ 15V

Peak Reflow Temperature (Cel) :

260

FET Type :

2 N-Channel (Dual)

Rds On (Max) @ Id, Vgs :

35m Ω @ 5.3A, 10V

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Packaging :

Tape and Reel (TR)