NDS8434
- Mfr.Part #
- NDS8434
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 6.5A 8SOIC
- Stock
- 3,653
- In Stock :
- 3,653
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Number of Terminations :
- 8
- Continuous Drain Current (ID) :
- 6.5A
- Gate to Source Voltage (Vgs) :
- 8V
- Factory Lead Time :
- 8 Weeks
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- FET Type :
- P-Channel
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 6.5A, 4.5V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Turn On Delay Time :
- 20 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 4.5V
- Weight :
- 230.4mg
- Transistor Application :
- SWITCHING
- Drain to Source Voltage (Vdss) :
- 20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.7V 4.5V
- Fall Time (Typ) :
- 63 ns
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Vgs (Max) :
- ±8V
- Power Dissipation-Max :
- 2.5W Ta
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Resistance :
- 35mOhm
- Current Rating :
- -6.7A
- Turn-Off Delay Time :
- 169 ns
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- -20V
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 2330pF @ 10V
- Transistor Element Material :
- SILICON
- Threshold Voltage :
- -700mV
- Pbfree Code :
- yes
- Rise Time :
- 38ns
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Packaging :
- Tape and Reel (TR)
- Current - Continuous Drain (Id) @ 25°C :
- 6.5A Ta
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Voltage - Rated DC :
- -20V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 2.5W
- Terminal Position :
- Dual
- Terminal Finish :
- Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 8
- Datasheets
- NDS8434

P-Channel Tape & Reel (TR) 35m Ω @ 6.5A, 4.5V ±8V 2330pF @ 10V 80nC @ 4.5V 20V 8-SOIC (0.154, 3.90mm Width)
NDS8434 Description
These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high-density process is specially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery-powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
NDS8434 Features
6.5A, -20V. RDS(ON)
= 0.035W @ VGS = -4.5V
RDS(ON)
= 0.05W @ VGS = -2.7V.
High-density cell design for extremely low RDS(ON).
High power and current handling capability in a widely used
surface mount package.
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