NDS8410
- Mfr.Part #
- NDS8410
- Manufacturer
- onsemi
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 10A 8SOIC
- Stock
- 45,111
- In Stock :
- 45,111
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 10A Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 1350pF @ 15V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Vgs (Max) :
- 20V
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 60nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 15m Ω @ 10A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation-Max :
- 2.5W Ta
- Drain to Source Voltage (Vdss) :
- 30V
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Datasheets
- NDS8410

N-Channel Tape & Reel (TR) 15m Ω @ 10A, 10V 20V 1350pF @ 15V 60nC @ 10V 30V 8-SOIC (0.154, 3.90mm Width)
NDS8410 Description
This high cell density, DMOS N-Channel enhancement mode power field effect transistor is made exclusively by Fairchild. Specifically designed to reduce on-state resistance and offer greater switching performance, this extremely high density technology. These components are especially well suited for low voltage applications like battery powered circuits and laptop computer power management, which require quick switching, little in-line power loss, and transient resistance.
NDS8410 Features
-
10A, 30V. RDS(ON) = 0.015W @ VGS = 10V
-
High density cell design for extremely low RDS(ON).
-
High power and current handling capability in a widely used surface mount package.
NDS8410 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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