NDC7002N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

960mW

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Dual

Fall Time (Typ) :

6 ns

Voltage - Rated DC :

50V

Pbfree Code :

yes

Factory Lead Time :

5 Weeks

Gate to Source Voltage (Vgs) :

20V

Current Rating :

350mA

Threshold Voltage :

1.9V

Input Capacitance (Ciss) (Max) @ Vds :

20pF @ 25V

Number of Elements :

2

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Logic Level Gate

Vgs(th) (Max) @ Id :

2.5V @ 250μA

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

36mg

Height :

900μm

Turn-Off Delay Time :

11 ns

Transistor Element Material :

SILICON

Length :

3mm

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Resistance :

2Ohm

Number of Terminations :

6

Drain Current-Max (Abs) (ID) :

0.51A

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 10V

Continuous Drain Current (ID) :

510mA

Number of Pins :

6

Transistor Application :

SWITCHING

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Rise Time :

6ns

Number of Channels :

2

FET Type :

2 N-Channel (Dual)

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

2 Ω @ 510mA, 10V

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Mount :

Surface Mount

Width :

1.7mm

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

700mW

JESD-609 Code :

e3

Dual Supply Voltage :

50V

Nominal Vgs :

1.9 V

Lead Free :

Lead Free

Mounting Type :

Surface Mount

Turn On Delay Time :

6 ns

Published :

1998