NDC7002N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Max Power Dissipation :

700mW

Published :

1998

Mounting Type :

Surface Mount

Length :

3mm

Transistor Application :

SWITCHING

Voltage - Rated DC :

50V

Height :

900μm

Gate Charge (Qg) (Max) @ Vgs :

1nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Threshold Voltage :

1.9V

Rds On (Max) @ Id, Vgs :

2 Ω @ 510mA, 10V

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Dual Supply Voltage :

50V

Transistor Element Material :

SILICON

Factory Lead Time :

5 Weeks

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Fall Time (Typ) :

6 ns

Drain Current-Max (Abs) (ID) :

0.51A

FET Feature :

Logic Level Gate

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

50V

Turn-Off Delay Time :

11 ns

Turn On Delay Time :

6 ns

Number of Channels :

2

Resistance :

2Ohm

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Continuous Drain Current (ID) :

510mA

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Current Rating :

350mA

REACH SVHC :

No SVHC

Power Dissipation :

960mW

Pbfree Code :

yes

Nominal Vgs :

1.9 V

Mount :

Surface Mount

Terminal Form :

Gull wing

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Element Configuration :

Dual

Width :

1.7mm

Number of Terminations :

6

FET Type :

2 N-Channel (Dual)

Weight :

36mg

Input Capacitance (Ciss) (Max) @ Vds :

20pF @ 25V

Number of Elements :

2

Rise Time :

6ns

Vgs(th) (Max) @ Id :

2.5V @ 250μA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Contact Plating :

Tin