NDC7003P
- Mfr.Part #
- NDC7003P
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET 2P-CH 60V 0.34A SSOT6
- Stock
- 29,339
- In Stock :
- 29,339
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Series :
- PowerTrench®
- Number of Channels :
- 2
- Pbfree Code :
- yes
- Current - Continuous Drain (Id) @ 25°C :
- 340mA
- Width :
- 1.7mm
- Transistor Application :
- SWITCHING
- Length :
- 3mm
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 8 ns
- Number of Terminations :
- 6
- Min Breakdown Voltage :
- 60V
- Turn On Delay Time :
- 3.2 ns
- Weight :
- 36mg
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- ECCN Code :
- EAR99
- FET Feature :
- Logic Level Gate
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Height :
- 1.1mm
- Power Dissipation :
- 960mW
- Element Configuration :
- Dual
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Gate Charge (Qg) (Max) @ Vgs :
- 2.2nC @ 10V
- Rise Time :
- 10ns
- Number of Pins :
- 6
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Published :
- 2002
- FET Type :
- 2 P-Channel (Dual)
- Input Capacitance (Ciss) (Max) @ Vds :
- 66pF @ 25V
- Threshold Voltage :
- -1V
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Continuous Drain Current (ID) :
- -340mA
- Drain to Source Breakdown Voltage :
- -60V
- Current Rating :
- -220mA
- Fall Time (Typ) :
- 10 ns
- Resistance :
- 5Ohm
- Power - Max :
- 700mW
- Nominal Vgs :
- -1.9 V
- Contact Plating :
- Tin
- Mount :
- Surface Mount
- Max Junction Temperature (Tj) :
- 150°C
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 2
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 5 Ω @ 340mA, 10V
- Factory Lead Time :
- 23 Weeks
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Drain Current-Max (Abs) (ID) :
- 0.34A
- Max Power Dissipation :
- 960mW
- Voltage - Rated DC :
- -50V
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Datasheets
- NDC7003P

NDC7003P datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
NDC7003P Description
These dual P?Channel Enhancement Mode Power Field Effect Transistors are produced using onsemi?ˉs proprietary Trench Technology. This very high density process has been designed to minimize on?state resistance, provide rugged and reliable performance and fast switching. This product is particularly suited to low voltage applications requiring a low current high side switch.
NDC7003P Features
? ?0.34 A, ?60 V RDS(ON) = 5 @ VGS = ?10 V
RDS(ON) = 7 @ VGS = ?4.5 V
? Low Gate Charge
? Fast Switching Speed
? High Performance Trench Technology for Low RDS(ON)
? SUPERSOT?6 Package: Small Footprint (72% smaller than
standard SO?8); Low Profile (1 mm Thick)
? This is a Pb?Free Device
NDC7003P Applications
This product is particularly suited to low voltage applications requiring a low current high side switch.
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