NDC7001C
- Mfr.Part #
- NDC7001C
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET N/P-CH 60V SSOT6
- Stock
- 2,610
- In Stock :
- 2,610
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 510mA 340mA
- JESD-609 Code :
- e3
- Factory Lead Time :
- 8 Weeks
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Threshold Voltage :
- 2.1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- N-CHANNEL AND P-CHANNEL
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 60V
- Turn-Off Delay Time :
- 8 ns
- FET Feature :
- Logic Level Gate
- Power Dissipation :
- 960mW
- Weight :
- 36mg
- Min Breakdown Voltage :
- 60V
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 2 Ω @ 510mA, 10V
- Resistance :
- 2Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 1.5nC @ 10V
- FET Type :
- N and P-Channel
- Current Rating :
- 350mA
- Rise Time :
- 10ns
- Continuous Drain Current (ID) :
- 510mA
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Width :
- 1.7mm
- Drain Current-Max (Abs) (ID) :
- 0.51A
- Fall Time (Typ) :
- 10 ns
- Height :
- 900μm
- Mounting Type :
- Surface Mount
- Number of Channels :
- 2
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 20pF @ 25V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Published :
- 2002
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Number of Elements :
- 2
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pbfree Code :
- yes
- Turn On Delay Time :
- 2.8 ns
- ECCN Code :
- EAR99
- Contact Plating :
- Tin
- Length :
- 3mm
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Max Power Dissipation :
- 700mW
- Nominal Vgs :
- 2.1 V
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Number of Pins :
- 6
- REACH SVHC :
- No SVHC
- Dual Supply Voltage :
- 60V
- Max Junction Temperature (Tj) :
- 150°C
- Element Configuration :
- Dual
- Number of Terminations :
- 6
- Datasheets
- NDC7001C

NDC7001C datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
The NDC7001C is a dual N and P-Channel Enhancement Mode Field Effect Transistor made with ON Semiconductor's unique DMOS technology. This high-density method was created to reduce on-state resistance, provide durable and reliable performance, and allow for quick switching. Low voltage, low current, switching, and power supply applications are ideal for the NDC7001C transistor.
NDC7001C Features
Q1:
0.51 A, 60 V
RDS(ON) = 2 Ω @ VGS = 10 V
RDS(ON) = 4 Ω @ VGS = 4.5 V
Q2:
-0.34 A, 60 V
RDS(ON) = 5 Ω @ VGS = -10 V
RDS(ON) = 7.5 Ω @ VGS = -4.5 V
High density cell design for low RDS (ON)
Design using copper lead-frame for superior thermal and electrical capabilities
NDC7001C Applications
Industrial
Power Management
Automotive
Vehicle Electrification
ADAS
Powertrain, Safety and Security
Body Electronics and LED Lighting
Technology
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