MS2212

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Package / Case :

M222

Number of Terminations :

2

Terminal Position :

Dual

Frequency - Transition :

960MHz~1.215GHz

Polarity/Channel Type :

NPN

Operating Temperature :

250°C TJ

Max Power Dissipation :

50W

Number of Elements :

1

Pbfree Code :

No

Terminal Finish :

TIN LEAD

Gain :

8.1dB ~ 8.9dB

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 500mA 5V

Pin Count :

2

Transistor Application :

AMPLIFIER

Collector Base Voltage (VCBO) :

55V

Radiation Hardening :

No

Mount :

Chassis Mount, Screw

RoHS Status :

RoHS Compliant

Terminal Form :

Flat

Transistor Type :

NPN

Case Connection :

Base

Highest Frequency Band :

L B

JESD-609 Code :

e0

Max Collector Current :

1.8A

Packaging :

Bulk

Transistor Element Material :

SILICON

Published :

2004

Configuration :

Single

Additional Feature :

High Reliability

JESD-30 Code :

S-CDFM-F2

Number of Pins :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

55V

Mounting Type :

Chassis Mount

Max Frequency :

1.215GHz