MRF581A

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Radiation Hardening :

No

Terminal Finish :

Tin/Lead (Sn/Pb)

Transistor Application :

AMPLIFIER

Collector Emitter Breakdown Voltage :

15V

Number of Pins :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

NPN

Gain :

13dB ~ 15.5dB

Base Part Number :

MRF581

Noise Figure (dB Typ @ f) :

3dB ~ 3.5dB @ 500MHz

Package / Case :

Micro-X ceramic (84C)

Transistor Type :

NPN

Max Power Dissipation :

1.25W

Mounting Type :

Surface Mount

Lifecycle Status :

Obsolete (Last Updated: 1 month ago)

Collector Base Voltage (VCBO) :

30V

Pbfree Code :

No

Configuration :

Single

Transistor Element Material :

SILICON

Number of Terminations :

4

Published :

2004

Transition Frequency :

5000MHz

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Collector-Base Capacitance-Max :

3pF

Output Power :

1.25W

Packaging :

Bulk

Max Collector Current :

200mA

Collector Emitter Voltage (VCEO) :

15V

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Terminal Form :

Flat

Terminal Position :

Radial

Pin Count :

4

JESD-609 Code :

e0

Operating Temperature :

150°C TJ

Number of Elements :

1

Mount :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

90 @ 50mA 5V

Frequency - Transition :

5GHz

Lead Free :

Lead Free