MRF581A

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Transistor Type :

NPN

Frequency - Transition :

5GHz

Gain :

13dB ~ 15.5dB

Radiation Hardening :

No

Polarity/Channel Type :

NPN

Collector Emitter Breakdown Voltage :

15V

Transistor Application :

AMPLIFIER

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Package / Case :

Micro-X ceramic (84C)

Collector Base Voltage (VCBO) :

30V

RoHS Status :

Non-RoHS Compliant

Terminal Form :

Flat

Number of Elements :

1

Configuration :

Single

Transition Frequency :

5000MHz

Base Part Number :

MRF581

JESD-609 Code :

e0

Packaging :

Bulk

Terminal Position :

Radial

ECCN Code :

EAR99

Lead Free :

Lead Free

Terminal Finish :

Tin/Lead (Sn/Pb)

Noise Figure (dB Typ @ f) :

3dB ~ 3.5dB @ 500MHz

Number of Terminations :

4

Number of Pins :

4

DC Current Gain (hFE) (Min) @ Ic, Vce :

90 @ 50mA 5V

Max Collector Current :

200mA

Collector Emitter Voltage (VCEO) :

15V

Collector-Base Capacitance-Max :

3pF

Mounting Type :

Surface Mount

Pbfree Code :

No

Published :

2004

Operating Temperature :

150°C TJ

Mount :

Surface Mount

Pin Count :

4

Lifecycle Status :

Obsolete (Last Updated: 1 month ago)

Max Power Dissipation :

1.25W

Transistor Element Material :

SILICON

Output Power :

1.25W