MRF517

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Pbfree Code :

No

Factory Lead Time :

13 Weeks

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Terminal Form :

Wire

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 60mA 10V

Frequency - Transition :

4GHz

Polarity/Channel Type :

NPN

Max Collector Current :

150mA

Transistor Type :

NPN

Collector-Base Capacitance-Max :

4.5pF

Collector Emitter Voltage (VCEO) :

20V

Packaging :

Bulk

Number of Elements :

1

RoHS Status :

RoHS Compliant

Terminal Position :

BOTTOM

Mounting Type :

Through Hole

Radiation Hardening :

No

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

20V

Pin Count :

3

Number of Pins :

3

Transistor Element Material :

SILICON

Gain :

9dB ~ 10dB

Terminal Finish :

TIN LEAD

Collector Base Voltage (VCBO) :

35V

Max Power Dissipation :

2.5W

Power - Max :

2.5W

Package / Case :

TO-205AD, TO-39-3 Metal Can

Configuration :

Single

Transistor Application :

AMPLIFIER

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

ECCN Code :

EAR99

Transition Frequency :

4000MHz

Mount :

Through Hole

Published :

2004

HTS Code :

8541.29.00.75

JESD-609 Code :

e0