MRF581
- Mfr.Part #
- MRF581
- Manufacturer
- Microsemi
- Package / Case
- Micro-X ceramic (84C)
- Datasheet
- Download
- Description
- RF TRANS NPN 18V 5GHZ MICRO X
- Stock
- 9,614
- In Stock :
- 9,614
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Pin Count :
- 4
- JESD-609 Code :
- e0
- Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 200mA
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 1.25W
- Base Part Number :
- MRF581
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Gain :
- 13dB ~ 15.5dB
- Number of Pins :
- 4
- Case Connection :
- COLLECTOR
- Mount :
- Surface Mount
- Pbfree Code :
- No
- Collector Base Voltage (VCBO) :
- 30V
- Mounting Type :
- Surface Mount
- Terminal Form :
- Flat
- Published :
- 2004
- Collector-Base Capacitance-Max :
- 3pF
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 18V
- Max Collector Current :
- 200mA
- Emitter Base Voltage (VEBO) :
- 2.5V
- Frequency :
- 5GHz
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 5000MHz
- RoHS Status :
- RoHS Compliant
- Package / Case :
- Micro-X ceramic (84C)
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- NPN
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Terminal Position :
- Radial
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 50 @ 50mA 5V
- Number of Terminations :
- 4
- Power Dissipation :
- 1.25W
- Noise Figure (dB Typ @ f) :
- 3dB ~ 3.5dB @ 500MHz
- Packaging :
- Bulk
- Lifecycle Status :
- Obsolete (Last Updated: 1 month ago)
- Collector Emitter Voltage (VCEO) :
- 18V
- Datasheets
- MRF581
MRF581 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Microsemi Corporation stock available at
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