MRF5812GR2

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Form :

Gull wing

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 50mA 5V

Power Dissipation-Max (Abs) :

1.25W

ECCN Code :

EAR99

Number of Terminations :

8

Base Part Number :

MRF5812

Number of Elements :

1

Highest Frequency Band :

ULTRA HIGH FREQUENCY B

Noise Figure (dB Typ @ f) :

2dB ~ 3dB @ 500MHz

Frequency - Transition :

5GHz

Pbfree Code :

yes

Pin Count :

8

Terminal Finish :

MATTE TIN

Published :

2004

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PDSO-G8

Additional Feature :

LOW NOISE

Voltage - Collector Emitter Breakdown (Max) :

15V

Transition Frequency :

5000MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Packaging :

Tape and Reel (TR)

Gain :

13dB ~ 15.5dB

Current - Collector (Ic) (Max) :

200mA

Transistor Application :

AMPLIFIER

Transistor Type :

NPN

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Power - Max :

1.25W

Collector-Base Capacitance-Max :

2pF

Polarity/Channel Type :

NPN

Surface Mount :

yes

Configuration :

Single

Terminal Position :

Dual

Mounting Type :

Surface Mount