MRF5812

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

50 @ 50mA 5V

Power Dissipation :

1.25W

Lifecycle Status :

Obsolete (Last Updated: 2 weeks ago)

JESD-609 Code :

e0

Transition Frequency :

5000MHz

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Gain :

13dB ~ 15.5dB

Packaging :

Bulk

Radiation Hardening :

No

Number of Terminations :

8

Collector Base Voltage (VCBO) :

30V

Transistor Type :

NPN

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Max Collector Current :

200mA

Configuration :

Single

Terminal Finish :

TIN LEAD

Noise Figure (dB Typ @ f) :

2dB ~ 3dB @ 500MHz

Transistor Application :

AMPLIFIER

Number of Pins :

8

Collector-Base Capacitance-Max :

2pF

Frequency :

5GHz

RoHS Status :

RoHS Compliant

Pin Count :

8

Number of Elements :

1

Pbfree Code :

No

Polarity/Channel Type :

NPN

Emitter Base Voltage (VEBO) :

2.5V

Collector Emitter Voltage (VCEO) :

15V

Mount :

Surface Mount

Published :

2004

Max Power Dissipation :

1.25W

Current - Collector (Ic) (Max) :

200mA

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

15V

ECCN Code :

EAR99