MRF422

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Mfr.Part #
MRF422
Manufacturer
MACOM Technology Solutions
Package / Case
211-11, Style 2
Datasheet
Download
Description
RF TRANS NPN 35V 211-11
Stock
331
In Stock :
331

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Manufacturer :
MACOM Technology Solutions
Product Category :
Transistors - Bipolar (BJT) - RF
Number of Elements :
1
Number of Pins :
4
Max Power Dissipation :
290W
Collector Base Voltage (VCBO) :
85V
RoHS Status :
ROHS3 Compliant
Power Dissipation :
290W
Number of Terminations :
4
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Max Collector Current :
20A
hFE Min :
15
DC Current Gain (hFE) (Min) @ Ic, Vce :
15 @ 5A 5V
Collector Emitter Voltage (VCEO) :
40V
Factory Lead Time :
20 Weeks
Frequency :
30MHz
Min Operating Temperature :
-65°C
Max Operating Temperature :
150°C
ECCN Code :
EAR99
Package / Case :
211-11, Style 2
Transistor Type :
NPN
Collector Emitter Breakdown Voltage :
35V
Published :
2009
Lead Free :
Lead Free
Continuous Collector Current :
20A
Packaging :
Tray
Mounting Type :
Chassis Mount
Pbfree Code :
yes
Mount :
Chassis Mount, Screw
Output Power :
150W
Pin Count :
4
Polarity/Channel Type :
NPN
Transistor Application :
AMPLIFIER
Emitter Base Voltage (VEBO) :
3V
Terminal Form :
Flat
Radiation Hardening :
No
Gain :
13dB
Terminal Position :
Radial
Datasheets
MRF422
Introducing Transistors - Bipolar (BJT) - RF MACOM Technology Solutions MRF422 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:4, Number of Terminations:4, Package / Case:211-11, Style 2, Mounting Type:Chassis Mount, Gain:13dB, MRF422 pinout, MRF422 datasheet PDF, MRF422 amp .Beyond Transistors - Bipolar (BJT) - RF MACOM Technology Solutions MRF422 ,we also offer BFP196WH6327XTSA1, BFR193E6327HTSA1, BFR360FH6327XTSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

MACOM Technology Solutions MRF422


MRF422 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from M/A-Com Technology Solutions stock available at

The MA-COM MRF422 is a NPN Bipolar Junction Transistor (BJT) designed for use in RF applications. It has a maximum voltage rating of 35V and a maximum frequency rating of 211-11MHz. It is designed to provide high gain and low noise performance in a wide range of RF applications.

Features of the MA-COM MRF422 include a low noise figure of 1.5dB, a high gain of 15dB, and a high power output of up to 10W. It also has a high breakdown voltage of 35V and a low thermal resistance of 0.5°C/W.

Applications of the MA-COM MRF422 include RF amplifiers, RF power amplifiers, RF oscillators, RF mixers, and RF switches. It is also suitable for use in wireless communication systems, such as cellular phones, Wi-Fi, and Bluetooth.
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