MPS8099RLRAG
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- Mfr.Part #
- MPS8099RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 19,367
- In Stock ：
- 19,367
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 4V
- Length :
- 5.2mm
- Terminal Position :
- BOTTOM
- hFE Min :
- 100
- REACH SVHC :
- Unknown
- Pin Count :
- 3
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100nA
- RoHS Status :
- RoHS Compliant
- Mount :
- Through Hole
- Transistor Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 4.19mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e1
- Collector Base Voltage (VCBO) :
- 80V
- Weight :
- 4.535924g
- Height :
- 5.33mm
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 500mA
- Power Dissipation :
- 625mW
- Collector Emitter Saturation Voltage :
- 400mV
- Base Part Number :
- MPS8099
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1mA 5V
- Transistor Application :
- AMPLIFIER
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Gain Bandwidth Product :
- 150MHz
- Number of Elements :
- 1
- Transition Frequency :
- 150MHz
- Max Power Dissipation :
- 625mW
- Published :
- 2006
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 80V
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Current Rating :
- 500mA
- Collector Emitter Voltage (VCEO) :
- 80V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Frequency :
- 150MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Breakdown Voltage :
- 80V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Voltage - Rated DC :
- 80V
- Datasheets
- MPS8099RLRAG
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPS8099RLRAG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 1mA 5V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 5mA, 100mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 150MHz is present in the part.There is a breakdown input voltage of 80V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
MPS8099RLRAG Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 150MHz
MPS8099RLRAG Applications
There are a lot of ON Semiconductor
MPS8099RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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