MPS8099RLRMG
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- Mfr.Part #
- MPS8099RLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 21,513
- In Stock ：
- 21,513
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 150MHz
- Qualification Status :
- Not Qualified
- Collector Emitter Breakdown Voltage :
- 80V
- RoHS Status :
- RoHS Compliant
- Transition Frequency :
- 150MHz
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- -55°C~150°C TJ
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 400mV
- Transistor Type :
- NPN
- Current Rating :
- 500mA
- Base Part Number :
- MPS8099
- Max Power Dissipation :
- 625mW
- HTS Code :
- 8541.21.00.75
- Collector Base Voltage (VCBO) :
- 80V
- Element Configuration :
- Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Voltage - Rated DC :
- 80V
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1mA 5V
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 100nA
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 400mV
- Emitter Base Voltage (VEBO) :
- 4V
- Published :
- 2007
- Max Collector Current :
- 500mA
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- hFE Min :
- 100
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Packaging :
- Tape and Box (TB)
- Datasheets
- MPS8099RLRMG
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPS8099RLRMG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.During maximum operation, collector current can be as low as 500mA volts.
MPS8099RLRMG Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 150MHz
MPS8099RLRMG Applications
There are a lot of ON Semiconductor
MPS8099RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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