MPS8099RLRM
- Mfr.Part #
- MPS8099RLRM
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 31,483
- In Stock :
- 31,483
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- MPS8099
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Position :
- BOTTOM
- Peak Reflow Temperature (Cel) :
- 240
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Number of Terminations :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Transition Frequency :
- 150MHz
- Voltage - Rated DC :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- JESD-609 Code :
- e0
- RoHS Status :
- Non-RoHS Compliant
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 400mV
- Max Power Dissipation :
- 625mW
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1mA 5V
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 500mA
- HTS Code :
- 8541.21.00.75
- Collector Emitter Saturation Voltage :
- 400mV
- Packaging :
- Tape and Box (TB)
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 500mA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Emitter Breakdown Voltage :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Element Material :
- SILICON
- Published :
- 2001
- Lead Free :
- Contains Lead
- JESD-30 Code :
- O-PBCY-T3
- Current - Collector Cutoff (Max) :
- 100nA
- Gain Bandwidth Product :
- 150MHz
- Element Configuration :
- Single
- Transistor Application :
- AMPLIFIER
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- not_compliant
- Collector Base Voltage (VCBO) :
- 80V
- Datasheets
- MPS8099RLRM

NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPS8099RLRM Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1mA 5V.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 150MHz.A maximum collector current of 500mA volts can be achieved.
MPS8099RLRM Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 150MHz
MPS8099RLRM Applications
There are a lot of ON Semiconductor
MPS8099RLRM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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