MPS8098G
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- Mfr.Part #
- MPS8098G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TO92
- Stock
- 39,300
- In Stock ：
- 39,300
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 150MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA
- Transition Frequency :
- 150MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 4V
- Number of Terminations :
- 3
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Power Dissipation :
- 625mW
- Current Rating :
- 500mA
- Terminal Position :
- BOTTOM
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 500mA
- Pin Count :
- 3
- Gain Bandwidth Product :
- 150MHz
- Collector Emitter Breakdown Voltage :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Packaging :
- Bulk
- hFE Min :
- 100
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Base Part Number :
- MPS8098
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Max Power Dissipation :
- 625mW
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Saturation Voltage :
- 400mV
- JESD-609 Code :
- e1
- Polarity/Channel Type :
- NPN
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 60V
- Published :
- 2006
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1mA 5V
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Application :
- AMPLIFIER
- Datasheets
- MPS8098G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS8098G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.During maximum operation, collector current can be as low as 500mA volts.
MPS8098G Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 150MHz
MPS8098G Applications
There are a lot of ON Semiconductor
MPS8098G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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