MPS8098G
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- Mfr.Part #
- MPS8098G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TO92
- Stock
- 39,300
- In Stock ：
- 39,300
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Qualification Status :
- Not Qualified
- Gain Bandwidth Product :
- 150MHz
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Power Dissipation :
- 625mW
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e1
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 400mV
- Base Part Number :
- MPS8098
- Current Rating :
- 500mA
- Lead Free :
- Lead Free
- Transition Frequency :
- 150MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Published :
- 2006
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Current - Collector Cutoff (Max) :
- 100nA
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Position :
- BOTTOM
- Voltage - Rated DC :
- 60V
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1mA 5V
- Element Configuration :
- Single
- Packaging :
- Bulk
- Emitter Base Voltage (VEBO) :
- 4V
- RoHS Status :
- RoHS Compliant
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 625mW
- Number of Elements :
- 1
- Mount :
- Through Hole
- Number of Terminations :
- 3
- hFE Min :
- 100
- Max Collector Current :
- 500mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transistor Type :
- NPN
- Frequency :
- 150MHz
- Pbfree Code :
- yes
- Datasheets
- MPS8098G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS8098G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.During maximum operation, collector current can be as low as 500mA volts.
MPS8098G Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 150MHz
MPS8098G Applications
There are a lot of ON Semiconductor
MPS8098G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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