MPS8098G
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- Mfr.Part #
- MPS8098G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 60V 0.5A TO92
- Stock
- 39,300
- In Stock ：
- 39,300
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 150MHz
- Element Configuration :
- Single
- Max Collector Current :
- 500mA
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 400mV
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Collector Emitter Breakdown Voltage :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1mA 5V
- hFE Min :
- 100
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Emitter Base Voltage (VEBO) :
- 4V
- Transistor Type :
- NPN
- Published :
- 2006
- RoHS Status :
- RoHS Compliant
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Qualification Status :
- Not Qualified
- Frequency :
- 150MHz
- Transition Frequency :
- 150MHz
- Base Part Number :
- MPS8098
- Max Power Dissipation :
- 625mW
- Current - Collector Cutoff (Max) :
- 100nA
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 625mW
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Voltage (VCEO) :
- 60V
- Collector Base Voltage (VCBO) :
- 60V
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- JESD-609 Code :
- e1
- Current Rating :
- 500mA
- Packaging :
- Bulk
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Application :
- AMPLIFIER
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 60V
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Datasheets
- MPS8098G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS8098G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 1mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 400mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 100mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 4V.Its current rating is 500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 150MHz.During maximum operation, collector current can be as low as 500mA volts.
MPS8098G Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 150MHz
MPS8098G Applications
There are a lot of ON Semiconductor
MPS8098G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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