MPS8099G
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- Mfr.Part #
- MPS8099G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 16,879
- In Stock ：
- 16,879
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- 500mA
- Collector Emitter Voltage (VCEO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Published :
- 2006
- Power Dissipation :
- 625mW
- Element Configuration :
- Single
- Voltage - Rated DC :
- 80V
- Length :
- 5.1816mm
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Packaging :
- Bulk
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Surface Mount :
- No
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Collector Emitter Saturation Voltage :
- 400mV
- Gain Bandwidth Product :
- 150MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Max Collector Current :
- 500mA
- Width :
- 4.191mm
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 80V
- RoHS Status :
- RoHS Compliant
- Terminal Position :
- BOTTOM
- Transition Frequency :
- 150MHz
- Transistor Element Material :
- SILICON
- Frequency :
- 150MHz
- Pin Count :
- 3
- Height :
- 5.334mm
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1mA 5V
- Max Power Dissipation :
- 625mW
- Collector Base Voltage (VCBO) :
- 80V
- Base Part Number :
- MPS8099
- Weight :
- 4.535924g
- Peak Reflow Temperature (Cel) :
- 260
- REACH SVHC :
- Unknown
- Number of Pins :
- 3
- JESD-609 Code :
- e1
- Number of Elements :
- 1
- hFE Min :
- 100
- Datasheets
- MPS8099G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS8099G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MPS8099G Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 150MHz
MPS8099G Applications
There are a lot of ON Semiconductor
MPS8099G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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