MPS8099G

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Mfr.Part #
MPS8099G
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN 80V 0.5A TO92
Stock
16,879
In Stock :
16,879

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
RoHS Compliant
Max Power Dissipation :
625mW
Time@Peak Reflow Temperature-Max (s) :
40
Length :
5.1816mm
Radiation Hardening :
No
Number of Terminations :
3
Current Rating :
500mA
Lead Free :
Lead Free
ECCN Code :
EAR99
Gain Bandwidth Product :
150MHz
Collector Emitter Breakdown Voltage :
80V
Number of Elements :
1
Element Configuration :
Single
Power Dissipation :
625mW
Packaging :
Bulk
Frequency :
150MHz
Max Collector Current :
500mA
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins :
3
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Current - Collector Cutoff (Max) :
100nA
Terminal Position :
BOTTOM
Vce Saturation (Max) @ Ib, Ic :
400mV @ 5mA, 100mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Through Hole
Polarity/Channel Type :
NPN
Width :
4.191mm
Collector Emitter Saturation Voltage :
400mV
REACH SVHC :
Unknown
Collector Base Voltage (VCBO) :
80V
Surface Mount :
No
hFE Min :
100
JESD-609 Code :
e1
Height :
5.334mm
Weight :
4.535924g
Transistor Application :
AMPLIFIER
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 4 days ago)
Voltage - Rated DC :
80V
Emitter Base Voltage (VEBO) :
6V
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 1mA 5V
Published :
2006
Base Part Number :
MPS8099
Pin Count :
3
Transistor Type :
NPN
Peak Reflow Temperature (Cel) :
260
Collector Emitter Voltage (VCEO) :
80V
Transition Frequency :
150MHz
Transistor Element Material :
SILICON
Datasheets
MPS8099G
Introducing Transistors - Bipolar (BJT) - Single onsemi MPS8099G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Base Part Number:MPS8099, MPS8099G pinout, MPS8099G datasheet PDF, MPS8099G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPS8099G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPS8099G


NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

MPS8099G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

MPS8099G Features


the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 150MHz


MPS8099G Applications


There are a lot of ON Semiconductor
MPS8099G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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