MPS8099G
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- Mfr.Part #
- MPS8099G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A TO92
- Stock
- 16,879
- In Stock ：
- 16,879
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 150MHz
- Collector Emitter Voltage (VCEO) :
- 80V
- Height :
- 5.334mm
- Current - Collector Cutoff (Max) :
- 100nA
- Emitter Base Voltage (VEBO) :
- 6V
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- JESD-609 Code :
- e1
- Terminal Position :
- BOTTOM
- Max Collector Current :
- 500mA
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 5mA, 100mA
- Packaging :
- Bulk
- Element Configuration :
- Single
- Number of Elements :
- 1
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2006
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 4.191mm
- Transition Frequency :
- 150MHz
- Pin Count :
- 3
- Power Dissipation :
- 625mW
- Collector Emitter Saturation Voltage :
- 400mV
- ECCN Code :
- EAR99
- Weight :
- 4.535924g
- Collector Emitter Breakdown Voltage :
- 80V
- Pbfree Code :
- yes
- Length :
- 5.1816mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Voltage - Rated DC :
- 80V
- Transistor Application :
- AMPLIFIER
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- REACH SVHC :
- Unknown
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 150MHz
- Polarity/Channel Type :
- NPN
- hFE Min :
- 100
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 80V
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Max Power Dissipation :
- 625mW
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1mA 5V
- Current Rating :
- 500mA
- Base Part Number :
- MPS8099
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Datasheets
- MPS8099G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPS8099G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 100mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MPS8099G Features
the DC current gain for this device is 100 @ 1mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 150MHz
MPS8099G Applications
There are a lot of ON Semiconductor
MPS8099G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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