MMUN2212LT1G

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Mfr.Part #
MMUN2212LT1G
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PREBIAS NPN 50V SOT23-3
Stock
15,234
In Stock :
15,234

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single, Pre-Biased
Voltage - Rated DC :
50V
RoHS Status :
ROHS3 Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 5mA 10V
Min Operating Temperature :
-55°C
Packaging :
Tape and Reel (TR)
Terminal Position :
Dual
Element Configuration :
Single
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Supply Voltage :
50V
Current Rating :
100mA
Published :
2004
Factory Lead Time :
4 Weeks
Transistor Type :
NPN - Pre-Biased
Pbfree Code :
yes
Continuous Collector Current :
100mA
Number of Terminations :
3
Base Part Number :
MMUN22**L
Halogen Free :
Halogen Free
Power Dissipation :
246mW
JESD-609 Code :
e3
Pin Count :
3
ECCN Code :
EAR99
Collector Emitter Saturation Voltage :
250mV
Additional Feature :
BUILT-IN BIAS RESISTOR RATIO IS 1
REACH SVHC :
No SVHC
Current - Collector Cutoff (Max) :
500nA
Surface Mount :
yes
Transistor Application :
SWITCHING
Height :
940μm
Max Collector Current :
100mA
Max Output Current :
100mA
Collector Emitter Voltage (VCEO) :
50V
Max Breakdown Voltage :
50V
Resistor - Base (R1) :
22 k Ω
Lead Free :
Lead Free
Terminal Form :
Gull wing
Polarity :
NPN
Resistor - Emitter Base (R2) :
22 k Ω
Peak Reflow Temperature (Cel) :
260
Number of Elements :
1
Max Operating Temperature :
150°C
Number of Pins :
3
Mounting Type :
Surface Mount
Time@Peak Reflow Temperature-Max (s) :
40
Max Power Dissipation :
246mW
Vce Saturation (Max) @ Ib, Ic :
250mV @ 300μA, 10mA
hFE Min :
60
Length :
2.9mm
Terminal Finish :
Tin (Sn)
Collector Emitter Breakdown Voltage :
50V
Package / Case :
TO-236-3, SC-59, SOT-23-3
Width :
1.3mm
Radiation Hardening :
No
Datasheets
MMUN2212LT1G
Introducing Transistors - Bipolar (BJT) - Single, Pre-Biased onsemi MMUN2212LT1G from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Base Part Number:MMUN22**L, Number of Pins:3, Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, MMUN2212LT1G pinout, MMUN2212LT1G datasheet PDF, MMUN2212LT1G amp .Beyond Transistors - Bipolar (BJT) - Single, Pre-Biased onsemi MMUN2212LT1G ,we also offer MMUN2211LT1G, MMUN2214LT1G, MMUN2233LT1G, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MMUN2212LT1G


MMUN2212LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from ON Semiconductor stock available at

Description: The ON Semiconductor MMUN2212LT1G is a single, pre-biased, NPN bipolar junction transistor (BJT) in a SOT23-3 package. It has a maximum collector current of 246 mW and a maximum collector-emitter voltage of 40 V.

Features:
• Pre-biased for easy use
• Low collector-emitter saturation voltage
• High current gain
• Low noise
• High switching speed
• Low power consumption
• High reliability

Applications: The MMUN2212LT1G is suitable for use in a wide range of applications, including power management, audio amplifiers, motor control, and switching circuits. It is also suitable for use in automotive, industrial, and consumer electronics.
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