MMUN2136LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

250mV

Number of Terminations :

3

Element Configuration :

Single

Lead Free :

Lead Free

Radiation Hardening :

No

Resistor - Emitter Base (R2) :

100 k Ω

Max Operating Temperature :

150°C

Terminal Position :

Dual

Max Collector Current :

100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

Polarity :

PNP

Min Operating Temperature :

-55°C

JESD-609 Code :

e3

Resistor - Base (R1) :

100 k Ω

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Factory Lead Time :

2 Weeks

Number of Pins :

3

Published :

2013

hFE Min :

80

Transistor Type :

PNP - Pre-Biased

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

246mW

Halogen Free :

Halogen Free

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

500nA

Pin Count :

3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

ECCN Code :

EAR99

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Finish :

Tin (Sn)

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Collector Emitter Breakdown Voltage :

50V

Surface Mount :

yes

Packaging :

Tape and Reel (TR)