MMUN2133LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Vce Saturation (Max) @ Ib, Ic :

250mV @ 300μA, 10mA

Number of Elements :

1

Terminal Position :

Dual

Base Part Number :

MMUN21**L

Current - Collector Cutoff (Max) :

500nA

Polarity :

PNP

Operating Supply Voltage :

50V

RoHS Status :

ROHS3 Compliant

Continuous Collector Current :

100mA

Current Rating :

-100mA

Max Output Current :

100mA

hFE Min :

80

Package / Case :

TO-236-3, SC-59, SOT-23-3

Voltage - Rated DC :

-50V

Power Dissipation :

246mW

Contact Plating :

Tin

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Terminal Form :

Gull wing

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Surface Mount :

yes

Number of Pins :

3

Pbfree Code :

yes

Halogen Free :

Halogen Free

Collector Emitter Saturation Voltage :

250mV

Pin Count :

3

Mounting Type :

Surface Mount

Published :

2001

Width :

1.4mm

Resistor - Base (R1) :

4.7 k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

3.04mm

Transistor Application :

SWITCHING

Number of Terminations :

3

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

100mA

Transistor Type :

PNP - Pre-Biased

Factory Lead Time :

6 Weeks

Radiation Hardening :

No

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 0.1

Max Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Element Configuration :

Single

Resistor - Emitter Base (R2) :

47 k Ω

Peak Reflow Temperature (Cel) :

260

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 10V

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

40

Height :

1.01mm

JESD-609 Code :

e3

Collector Emitter Voltage (VCEO) :

50V

Max Power Dissipation :

246mW