MMUN2132LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Terminal Form :

Gull wing

Operating Supply Voltage :

50V

Max Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Max Collector Current :

100mA

Number of Terminations :

3

Voltage - Rated DC :

-50V

Base Part Number :

MMUN21**L

Max Power Dissipation :

246mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

-100mA

Width :

1.3mm

Collector Emitter Voltage (VCEO) :

50V

Factory Lead Time :

5 Weeks

Contact Plating :

Tin

Continuous Collector Current :

100mA

Halogen Free :

Halogen Free

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Height :

940μm

JESD-609 Code :

e3

Number of Elements :

1

Published :

2008

Time@Peak Reflow Temperature-Max (s) :

40

Polarity :

PNP

Max Operating Temperature :

150°C

Terminal Position :

Dual

Lead Free :

Lead Free

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Length :

2.9mm

Radiation Hardening :

No

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 5mA 10V

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Pin Count :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Peak Reflow Temperature (Cel) :

260

hFE Min :

15

Min Operating Temperature :

-55°C

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

250mV @ 1mA, 10mA

Surface Mount :

yes

Resistor - Base (R1) :

4.7 k Ω

Collector Emitter Saturation Voltage :

250mV

ECCN Code :

EAR99

Max Output Current :

100mA

Collector Emitter Breakdown Voltage :

50V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Resistor - Emitter Base (R2) :

4.7 k Ω

Power Dissipation :

246mW

Transistor Type :

PNP - Pre-Biased

Pbfree Code :

yes

Current - Collector Cutoff (Max) :

500nA