MMUN2130LT1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Collector Emitter Voltage (VCEO) :

250mV

Continuous Collector Current :

100mA

Factory Lead Time :

2 Weeks

Lead Free :

Lead Free

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO 1

Resistor - Base (R1) :

1 k Ω

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 11 hours ago)

JESD-609 Code :

e3

Max Power Dissipation :

246mW

Package / Case :

TO-236-3, SC-59, SOT-23-3

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Qualification Status :

Not Qualified

Base Part Number :

MMUN21**L

Current - Collector Cutoff (Max) :

500nA

Current Rating :

-100mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

3 @ 5mA 10V

Polarity :

PNP

Halogen Free :

Halogen Free

Number of Elements :

1

Voltage - Rated DC :

-50V

Transistor Type :

PNP - Pre-Biased

Transistor Application :

SWITCHING

Max Collector Current :

100mA

Terminal Position :

Dual

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

246mW

Terminal Form :

Gull wing

Min Operating Temperature :

-55°C

Published :

2005

Resistor - Emitter Base (R2) :

1 k Ω

Max Operating Temperature :

150°C

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Number of Pins :

3

Collector Emitter Breakdown Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Pin Count :

3

Element Configuration :

Single

Vce Saturation (Max) @ Ib, Ic :

250mV @ 5mA, 10mA

Terminal Finish :

Tin (Sn)