MMBT5551

Manufacturer :

YANGJIE

Product Category :

Transistors - Bipolar (BJT) - Single

Configuration :

Single

Surface Mount :

yes

Frequency - Transition :

100MHz

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Collector (Ic) (Max) :

600mA

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Power - Max :

350mW

Operating Temperature :

-55°C~150°C TJ

Vce Saturation (Max) @ Ib, Ic :

200mV @ 5mA, 50mA

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

3

Current - Collector Cutoff (Max) :

50nA ICBO

Transistor Application :

AMPLIFIER

Terminal Finish :

MATTE TIN

Terminal Position :

Dual

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Transition Frequency :

100MHz

Voltage - Collector Emitter Breakdown (Max) :

160V

Transistor Type :

NPN

JESD-30 Code :

R-PDSO-G3

Pbfree Code :

yes

Mounting Type :

Surface Mount

Polarity/Channel Type :

NPN

Number of Elements :

1

Qualification Status :

COMMERCIAL