MJ15016G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Width :

26.67mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

10 @ 4A 2V

Pbfree Code :

yes

Operating Temperature :

-65°C~200°C TJ

Power Dissipation :

180W

Collector Base Voltage (VCBO) :

200V

Current - Collector Cutoff (Max) :

100μA

Element Configuration :

Single

Collector Emitter Voltage (VCEO) :

120V

Peak Reflow Temperature (Cel) :

260

Current Rating :

-15A

Radiation Hardening :

No

ECCN Code :

EAR99

Frequency :

18MHz

Published :

2006

REACH SVHC :

No SVHC

Power - Max :

115W

Terminal Position :

BOTTOM

Transistor Type :

PNP

Case Connection :

COLLECTOR

Contact Plating :

Tin

Vce Saturation (Max) @ Ib, Ic :

5V @ 7A, 15A

Collector Emitter Saturation Voltage :

1.1V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

7V

Length :

39.37mm

Pin Count :

2

RoHS Status :

ROHS3 Compliant

Terminal Form :

PIN/PEG

Packaging :

Tray

Mounting Type :

Through Hole

Lead Free :

Lead Free

Max Collector Current :

15A

Collector Emitter Breakdown Voltage :

120V

Weight :

4.535924g

Lifecycle Status :

ACTIVE (Last Updated: 14 hours ago)

Number of Pins :

2

Polarity/Channel Type :

PNP

Factory Lead Time :

2 Weeks

Transistor Element Material :

SILICON

Gain Bandwidth Product :

18MHz

Number of Terminations :

2

JESD-609 Code :

e3

Surface Mount :

No

Package / Case :

TO-204AA, TO-3

Transition Frequency :

2.2MHz

Voltage - Rated DC :

-120V

Height :

8.51mm

Number of Elements :

1

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

hFE Min :

10

Max Power Dissipation :

180W