MJ15004G
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- Mfr.Part #
- MJ15004G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PNP 140V 20A TO204
- Stock
- 651
- In Stock ：
- 651
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 5A 2V
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- -140V
- Collector Base Voltage (VCBO) :
- 140V
- Lifecycle Status :
- ACTIVE (Last Updated: 19 hours ago)
- Height :
- 8.51mm
- Operating Temperature :
- -65°C~200°C TJ
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 250μA
- Weight :
- 4.535924g
- Terminal Form :
- PIN/PEG
- Contact Plating :
- Tin
- Width :
- 26.67mm
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500mA, 5A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Collector Current :
- 20A
- Pin Count :
- 2
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 140V
- Packaging :
- Tray
- Published :
- 2005
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Frequency :
- 2MHz
- Gain Bandwidth Product :
- 2MHz
- Transition Frequency :
- 2MHz
- Power Dissipation :
- 250W
- Transistor Type :
- PNP
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 2
- Transistor Application :
- AMPLIFIER
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 250W
- Current Rating :
- -20A
- JESD-609 Code :
- e3
- Surface Mount :
- No
- hFE Min :
- 25
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-204AA, TO-3
- Collector Emitter Voltage (VCEO) :
- 140V
- Collector Emitter Saturation Voltage :
- 1V
- Number of Terminations :
- 2
- Length :
- 39.37mm
- Datasheets
- MJ15004G
PNP -65°C~200°C TJ 250μA 1 Elements 2 Terminations SILICON PNP TO-204AA, TO-3 Tray Through Hole
MJ15004G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 5A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 500mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -20A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 2MHz.During maximum operation, collector current can be as low as 20A volts.
MJ15004G Features
the DC current gain for this device is 25 @ 5A 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 500mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -20A
a transition frequency of 2MHz
MJ15004G Applications
There are a lot of ON Semiconductor
MJ15004G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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