MJ15004G
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- Mfr.Part #
- MJ15004G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PNP 140V 20A TO204
- Stock
- 651
- In Stock ：
- 651
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- -140V
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Pin Count :
- 2
- Published :
- 2005
- Operating Temperature :
- -65°C~200°C TJ
- Terminal Position :
- BOTTOM
- Factory Lead Time :
- 8 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 5A 2V
- Collector Base Voltage (VCBO) :
- 140V
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 2MHz
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 140V
- Number of Terminations :
- 2
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Collector Emitter Saturation Voltage :
- 1V
- Pbfree Code :
- yes
- hFE Min :
- 25
- Frequency :
- 2MHz
- Contact Plating :
- Tin
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Current Rating :
- -20A
- Terminal Form :
- PIN/PEG
- Power Dissipation :
- 250W
- Number of Pins :
- 2
- Lead Free :
- Lead Free
- Max Collector Current :
- 20A
- Gain Bandwidth Product :
- 2MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 19 hours ago)
- Weight :
- 4.535924g
- Max Power Dissipation :
- 250W
- Collector Emitter Voltage (VCEO) :
- 140V
- Length :
- 39.37mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 250μA
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500mA, 5A
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 26.67mm
- Height :
- 8.51mm
- Mounting Type :
- Through Hole
- Transistor Type :
- PNP
- Package / Case :
- TO-204AA, TO-3
- Packaging :
- Tray
- Datasheets
- MJ15004G
PNP -65°C~200°C TJ 250μA 1 Elements 2 Terminations SILICON PNP TO-204AA, TO-3 Tray Through Hole
MJ15004G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 5A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 500mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -20A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 2MHz.During maximum operation, collector current can be as low as 20A volts.
MJ15004G Features
the DC current gain for this device is 25 @ 5A 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 500mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -20A
a transition frequency of 2MHz
MJ15004G Applications
There are a lot of ON Semiconductor
MJ15004G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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