MJ15004G
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- Mfr.Part #
- MJ15004G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PNP 140V 20A TO204
- Stock
- 651
- In Stock ：
- 651
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 19 hours ago)
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Voltage - Rated DC :
- -140V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 5A 2V
- Current Rating :
- -20A
- Collector Emitter Voltage (VCEO) :
- 140V
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 500mA, 5A
- Factory Lead Time :
- 8 Weeks
- Operating Temperature :
- -65°C~200°C TJ
- Terminal Form :
- PIN/PEG
- Frequency :
- 2MHz
- Transition Frequency :
- 2MHz
- Surface Mount :
- No
- Packaging :
- Tray
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 250μA
- Max Collector Current :
- 20A
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- PNP
- Collector Base Voltage (VCBO) :
- 140V
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- BOTTOM
- Length :
- 39.37mm
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Contact Plating :
- Tin
- Package / Case :
- TO-204AA, TO-3
- Width :
- 26.67mm
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Weight :
- 4.535924g
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 250W
- Published :
- 2005
- Power Dissipation :
- 250W
- Pin Count :
- 2
- Collector Emitter Breakdown Voltage :
- 140V
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 1V
- Height :
- 8.51mm
- Mounting Type :
- Through Hole
- Number of Terminations :
- 2
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 25
- Gain Bandwidth Product :
- 2MHz
- Number of Pins :
- 2
- JESD-609 Code :
- e3
- Datasheets
- MJ15004G
PNP -65°C~200°C TJ 250μA 1 Elements 2 Terminations SILICON PNP TO-204AA, TO-3 Tray Through Hole
MJ15004G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 5A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 500mA, 5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -20A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 2MHz.During maximum operation, collector current can be as low as 20A volts.
MJ15004G Features
the DC current gain for this device is 25 @ 5A 2V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 500mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -20A
a transition frequency of 2MHz
MJ15004G Applications
There are a lot of ON Semiconductor
MJ15004G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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