MJ15015
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- Mfr.Part #
- MJ15015
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 15A TO3
- Stock
- 138
- In Stock ：
- 138
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 2
- Radiation Hardening :
- No
- Max Collector Current :
- 15A
- Weight :
- 4.535924g
- Emitter Base Voltage (VEBO) :
- 7V
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 4A 2V
- Factory Lead Time :
- 12 Weeks
- Terminal Form :
- PIN/PEG
- Max Power Dissipation :
- 180W
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Packaging :
- Tray
- Current - Collector Cutoff (Max) :
- 100μA
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 2
- Collector Emitter Voltage (VCEO) :
- 120V
- Published :
- 2006
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 120V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Package / Case :
- TO-204AA, TO-3
- Lead Free :
- Lead Free
- Number of Terminations :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 10
- Terminal Position :
- BOTTOM
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Width :
- 26.67mm
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- -65°C~200°C TJ
- Collector Emitter Saturation Voltage :
- 1.1V
- Power Dissipation :
- 180W
- Contact Plating :
- Tin
- Height :
- 8.51mm
- Length :
- 39.37mm
- Frequency :
- 6MHz
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Surface Mount :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 7A, 15A
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 0.8MHz
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 120V
- Current Rating :
- 15A
- Gain Bandwidth Product :
- 6MHz
- Collector Base Voltage (VCBO) :
- 200V
- Datasheets
- MJ15015
NPN -65°C~200°C TJ 100μA 1 Elements 2 Terminations SILICON PNP TO-204AA, TO-3 Tray Through Hole
MJ15015G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 4A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 5V @ 7A, 15A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 15A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 0.8MHz.During maximum operation, collector current can be as low as 15A volts.
MJ15015G Features
the DC current gain for this device is 10 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 5V @ 7A, 15A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 0.8MHz
MJ15015G Applications
There are a lot of ON Semiconductor
MJ15015G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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