MJ15015
- Mfr.Part #
- MJ15015
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 15A TO3
- Stock
- 138
- In Stock :
- 138
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 120V
- Gain Bandwidth Product :
- 6MHz
- Collector Emitter Saturation Voltage :
- 1.1V
- Number of Terminations :
- 2
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- PIN/PEG
- Max Collector Current :
- 15A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 4A 2V
- Operating Temperature :
- -65°C~200°C TJ
- Number of Pins :
- 2
- Current - Collector Cutoff (Max) :
- 100μA
- hFE Min :
- 10
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-204AA, TO-3
- Collector Emitter Breakdown Voltage :
- 120V
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Packaging :
- Tray
- Terminal Position :
- BOTTOM
- Factory Lead Time :
- 12 Weeks
- Pbfree Code :
- yes
- Power Dissipation :
- 180W
- Height :
- 8.51mm
- Polarity/Channel Type :
- PNP
- Weight :
- 4.535924g
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 7A, 15A
- Case Connection :
- COLLECTOR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 15A
- Collector Emitter Voltage (VCEO) :
- 120V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transition Frequency :
- 0.8MHz
- Peak Reflow Temperature (Cel) :
- 260
- Contact Plating :
- Tin
- Published :
- 2006
- Mounting Type :
- Through Hole
- Width :
- 26.67mm
- Pin Count :
- 2
- ECCN Code :
- EAR99
- Length :
- 39.37mm
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 200V
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 180W
- Surface Mount :
- No
- Frequency :
- 6MHz
- Datasheets
- MJ15015

NPN -65°C~200°C TJ 100μA 1 Elements 2 Terminations SILICON PNP TO-204AA, TO-3 Tray Through Hole
MJ15015G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 4A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 5V @ 7A, 15A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 15A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 0.8MHz.During maximum operation, collector current can be as low as 15A volts.
MJ15015G Features
the DC current gain for this device is 10 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 5V @ 7A, 15A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 0.8MHz
MJ15015G Applications
There are a lot of ON Semiconductor
MJ15015G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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