MJ15015
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- Mfr.Part #
- MJ15015
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 15A TO3
- Stock
- 138
- In Stock ：
- 138
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Factory Lead Time :
- 12 Weeks
- Collector Emitter Saturation Voltage :
- 1.1V
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 120V
- Published :
- 2006
- Max Collector Current :
- 15A
- Collector Base Voltage (VCBO) :
- 200V
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Length :
- 39.37mm
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 2
- hFE Min :
- 10
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-204AA, TO-3
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Type :
- NPN
- Max Power Dissipation :
- 180W
- Emitter Base Voltage (VEBO) :
- 7V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 4A 2V
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 180W
- Operating Temperature :
- -65°C~200°C TJ
- Voltage - Rated DC :
- 120V
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Transition Frequency :
- 0.8MHz
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 7A, 15A
- Number of Pins :
- 2
- Height :
- 8.51mm
- Weight :
- 4.535924g
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- 15A
- Terminal Form :
- PIN/PEG
- Packaging :
- Tray
- Pin Count :
- 2
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Width :
- 26.67mm
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 6MHz
- Collector Emitter Voltage (VCEO) :
- 120V
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 100μA
- Frequency :
- 6MHz
- Datasheets
- MJ15015
NPN -65°C~200°C TJ 100μA 1 Elements 2 Terminations SILICON PNP TO-204AA, TO-3 Tray Through Hole
MJ15015G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 4A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 5V @ 7A, 15A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 15A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 0.8MHz.During maximum operation, collector current can be as low as 15A volts.
MJ15015G Features
the DC current gain for this device is 10 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 5V @ 7A, 15A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 0.8MHz
MJ15015G Applications
There are a lot of ON Semiconductor
MJ15015G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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