MJ15015
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- Mfr.Part #
- MJ15015
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 15A TO3
- Stock
- 138
- In Stock ：
- 138
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- PIN/PEG
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Published :
- 2006
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 180W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 4A 2V
- Surface Mount :
- No
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 120V
- Transistor Element Material :
- SILICON
- Packaging :
- Tray
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 6MHz
- hFE Min :
- 10
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 120V
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Contact Plating :
- Tin
- Voltage - Rated DC :
- 120V
- Radiation Hardening :
- No
- Current Rating :
- 15A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 7A, 15A
- Power Dissipation :
- 180W
- Gain Bandwidth Product :
- 6MHz
- Collector Emitter Saturation Voltage :
- 1.1V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 7V
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Terminal Position :
- BOTTOM
- Pin Count :
- 2
- Width :
- 26.67mm
- Collector Base Voltage (VCBO) :
- 200V
- JESD-609 Code :
- e3
- Max Collector Current :
- 15A
- Weight :
- 4.535924g
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 2
- Current - Collector Cutoff (Max) :
- 100μA
- Factory Lead Time :
- 12 Weeks
- Height :
- 8.51mm
- Package / Case :
- TO-204AA, TO-3
- Operating Temperature :
- -65°C~200°C TJ
- Number of Pins :
- 2
- Transition Frequency :
- 0.8MHz
- Length :
- 39.37mm
- Datasheets
- MJ15015
MJ15015 Documents
NPN -65°C~200°C TJ 100μA 1 Elements 2 Terminations SILICON PNP TO-204AA, TO-3 Tray Through Hole
MJ15015G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 4A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 5V @ 7A, 15A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 15A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 0.8MHz.During maximum operation, collector current can be as low as 15A volts.
MJ15015G Features
the DC current gain for this device is 10 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 5V @ 7A, 15A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 0.8MHz
MJ15015G Applications
There are a lot of ON Semiconductor
MJ15015G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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