MJ15001G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

25

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

25 @ 4A 2V

Transistor Application :

AMPLIFIER

Surface Mount :

No

Polarity/Channel Type :

NPN

Terminal Finish :

Tin (Sn)

Width :

26.67mm

Transition Frequency :

2MHz

Current - Collector Cutoff (Max) :

250μA

Terminal Form :

PIN/PEG

Collector Emitter Saturation Voltage :

1V

Number of Pins :

2

Case Connection :

COLLECTOR

Packaging :

Tray

Vce Saturation (Max) @ Ib, Ic :

1V @ 400mA, 4A

Max Power Dissipation :

200W

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Current Rating :

15A

ECCN Code :

EAR99

Operating Temperature :

-65°C~200°C TJ

Voltage - Rated DC :

140V

Height :

8.51mm

Collector Emitter Voltage (VCEO) :

140V

Transistor Type :

NPN

Gain Bandwidth Product :

2MHz

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Mounting Type :

Through Hole

Collector Base Voltage (VCBO) :

140V

Terminal Position :

BOTTOM

Number of Elements :

1

REACH SVHC :

No SVHC

Lead Free :

Lead Free

JESD-609 Code :

e3

Emitter Base Voltage (VEBO) :

5V

Frequency :

2MHz

Pbfree Code :

yes

Termination :

Through Hole

Weight :

4.535924g

Published :

2005

Pin Count :

2

Length :

39.37mm

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

2

Element Configuration :

Single

Package / Case :

TO-204AA, TO-3

Power Dissipation :

200W

Collector Emitter Breakdown Voltage :

140V

Max Collector Current :

15A

Factory Lead Time :

2 Weeks