MJ15015G
- Mfr.Part #
- MJ15015G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 120V 15A TO204
- Stock
- 5,804
- In Stock :
- 5,804
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Frequency :
- 6MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 2
- Collector Emitter Voltage (VCEO) :
- 120V
- Pbfree Code :
- yes
- Weight :
- 4.535924g
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10 @ 4A 2V
- Surface Mount :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Radiation Hardening :
- No
- hFE Min :
- 10
- Emitter Base Voltage (VEBO) :
- 7V
- Transition Frequency :
- 0.8MHz
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 120V
- Terminal Position :
- BOTTOM
- Gain Bandwidth Product :
- 6MHz
- Published :
- 2006
- Operating Temperature :
- -65°C~200°C TJ
- Number of Pins :
- 2
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100μA
- Voltage - Rated DC :
- 120V
- Current Rating :
- 15A
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Type :
- NPN
- Terminal Form :
- PIN/PEG
- Collector Base Voltage (VCBO) :
- 200V
- Collector Emitter Saturation Voltage :
- 1.1V
- Factory Lead Time :
- 12 Weeks
- Max Power Dissipation :
- 180W
- Polarity/Channel Type :
- PNP
- Contact Plating :
- Tin
- Packaging :
- Tray
- Length :
- 39.37mm
- Vce Saturation (Max) @ Ib, Ic :
- 5V @ 7A, 15A
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 180W
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 26.67mm
- Max Collector Current :
- 15A
- Height :
- 8.51mm
- Package / Case :
- TO-204AA, TO-3
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Datasheets
- MJ15015G

NPN -65°C~200°C TJ 100μA 1 Elements 2 Terminations SILICON PNP TO-204AA, TO-3 Tray Through Hole
MJ15015G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 4A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.1V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 5V @ 7A, 15A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Its current rating is 15A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 0.8MHz.During maximum operation, collector current can be as low as 15A volts.
MJ15015G Features
the DC current gain for this device is 10 @ 4A 2V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 5V @ 7A, 15A
the emitter base voltage is kept at 7V
the current rating of this device is 15A
a transition frequency of 0.8MHz
MJ15015G Applications
There are a lot of ON Semiconductor
MJ15015G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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