MDS800

Manufacturer :

Microsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Published :

2012

Polarity/Channel Type :

NPN

Collector Emitter Voltage (VCEO) :

65V

Transistor Type :

NPN

Number of Terminations :

2

Pbfree Code :

No

JESD-30 Code :

R-CDFM-F2

Radiation Hardening :

No

ECCN Code :

EAR99

Operating Temperature :

200°C TJ

Max Power Dissipation :

1.458kW

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 1A 5V

Max Frequency :

1.09GHz

Mounting Type :

Chassis Mount

Number of Pins :

3

JESD-609 Code :

e0

Transistor Element Material :

SILICON

Transistor Application :

AMPLIFIER

Power - Max :

1458W

RoHS Status :

RoHS Compliant

Frequency - Transition :

1.09GHz

Collector Emitter Breakdown Voltage :

65V

Pin Count :

2

Package / Case :

55ST-1

Mount :

Chassis Mount, Screw

Terminal Position :

Dual

Terminal Finish :

TIN LEAD

Max Collector Current :

60A

Number of Elements :

1

Gain :

8.6dB

Terminal Form :

Flat

Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Bulk

Highest Frequency Band :

L B