MBR3100VP-E1

Manufacturer :

Diodes Incorporated

Product Category :

Diodes - Rectifiers - Single

Packaging :

Bulk

Number of Terminations :

2

Additional Feature :

LOW NOISE

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Diode Element Material :

SILICON

Reach Compliance Code :

not_compliant

Voltage - Forward (Vf) (Max) @ If :

850mV @ 3A

Terminal Form :

Wire

JESD-30 Code :

O-PALF-W2

Average Rectified Current :

3A

Package / Case :

DO-201AA, DO-27, Axial

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Application :

HIGH VOLTAGE POWER

Current - Reverse Leakage @ Vr :

500µA @ 100V

Operating Temperature - Junction :

-65°C~150°C

Factory Lead Time :

5 Weeks

Non-rep Pk Forward Current-Max :

80A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Operating Temperature (Max) :

150°C

RoHS Status :

ROHS3 Compliant

Published :

2010

ECCN Code :

EAR99

HTS Code :

8541.10.00.80

Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

Isolated

Mounting Type :

Through Hole

Diode Type :

Schottky

Reverse Current-Max :

500μA

Number of Phases :

1

Output Current-Max :

3A

Voltage - DC Reverse (Vr) (Max) :

100V

Max Reverse Voltage (DC) :

100V