MBR300100CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Max Operating Temperature :

175°C

Max Reverse Leakage Current :

1μA

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Terminal Form :

UNSPECIFIED

Min Operating Temperature :

-40°C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Packaging :

Bulk

Number of Elements :

2

Max Repetitive Reverse Voltage (Vrrm) :

100V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Peak Reverse Current :

1A

Element Configuration :

Common Anode

Forward Current :

300A

RoHS Status :

RoHS Compliant

Current - Average Rectified (Io) :

300A DC

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Output Current-Max :

150A

Mounting Type :

Chassis Mount

Factory Lead Time :

6 Weeks

Mount :

Chassis Mount

Number of Phases :

1

Application :

Power

HTS Code :

8541.10.00.80

Diode Type :

Schottky

Max Reverse Voltage (DC) :

100V

Voltage - Forward (Vf) (Max) @ If :

840mV @ 150A

Diode Configuration :

1 Pair Common Anode

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Average Rectified Current :

300A

JESD-30 Code :

R-PUFM-X2

Diode Element Material :

SILICON

Terminal Position :

UPPER

Number of Terminations :

2

Package / Case :

Twin Tower

Max Surge Current :

2.5kA

Current - Reverse Leakage @ Vr :

8mA @ 20V