MBR30035CT

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Max Repetitive Reverse Voltage (Vrrm) :

35V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Max Operating Temperature :

175°C

HTS Code :

8541.10.00.80

Current - Reverse Leakage @ Vr :

8mA @ 20V

ECCN Code :

EAR99

Number of Pins :

2

Package / Case :

Twin Tower

Application :

Power

Diode Configuration :

1 Pair Common Cathode

Operating Temperature - Junction :

-55°C~150°C

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

REACH SVHC :

No SVHC

Number of Elements :

2

Element Configuration :

Common Cathode

Max Reverse Voltage (DC) :

35V

Forward Current :

150A

Terminal Form :

UNSPECIFIED

Voltage - Forward (Vf) (Max) @ If :

650mV @ 150A

Current - Average Rectified (Io) :

200A DC

Mount :

Chassis Mount

Max Forward Surge Current (Ifsm) :

2.5kA

Pbfree Code :

yes

Peak Reverse Current :

1μA

Min Operating Temperature :

-40°C

Lifecycle Status :

PRODUCTION (Last Updated: 6 months ago)

Average Rectified Current :

200A

Factory Lead Time :

6 Weeks

Forward Voltage :

750mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2012

Terminal Position :

UPPER

Diode Type :

Schottky

Mounting Type :

Chassis Mount

Diode Element Material :

SILICON

RoHS Status :

RoHS Compliant

Packaging :

Bulk

Number of Phases :

1