MBR30035CTR

Manufacturer :

GeneSiC Semiconductor

Product Category :

Diodes - Rectifiers - Arrays

Element Configuration :

Common Anode

Max Repetitive Reverse Voltage (Vrrm) :

35V

Terminal Position :

UPPER

Number of Terminations :

2

Diode Element Material :

SILICON

Forward Current :

150A

REACH SVHC :

No SVHC

Forward Voltage :

650mV

Voltage - Forward (Vf) (Max) @ If :

700mV @ 150A

Speed :

Fast Recovery =< 500ns, > 200mA (Io)

Max Surge Current :

2.5kA

Number of Elements :

2

Published :

2003

Average Rectified Current :

300A

Factory Lead Time :

4 Weeks

RoHS Status :

RoHS Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

UNSPECIFIED

Diode Configuration :

1 Pair Common Anode

Mount :

Chassis Mount

Number of Phases :

1

Number of Pins :

2

HTS Code :

8541.10.00.80

ECCN Code :

EAR99

Max Reverse Leakage Current :

1μA

Current - Reverse Leakage @ Vr :

1mA @ 35V

Operating Temperature - Junction :

-55°C~150°C

Application :

Power

Max Operating Temperature :

175°C

Packaging :

Bulk

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Peak Reverse Current :

1A

Package / Case :

Twin Tower

Mounting Type :

Chassis Mount

Diode Type :

Schottky, Reverse Polarity

Max Reverse Voltage (DC) :

35V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-40°C