MAT12AHZ

Manufacturer :

Analog Devices, Inc.

Product Category :

Transistors - Bipolar (BJT) - Arrays

Terminal Position :

BOTTOM

Vce Saturation (Max) @ Ib, Ic :

200mV @ 100μA, 1mA

Terminal Form :

Wire

Number of Elements :

2

Operating Temperature :

-65°C~150°C TJ

DC Current Gain-Min (hFE) :

300

hFE Min :

200

Number of Terminations :

6

Max Collector Current :

20mA

Emitter Base Voltage (VEBO) :

40V

Polarity :

NPN

Factory Lead Time :

8 Weeks

Radiation Hardening :

No

Pbfree Code :

No

Frequency :

200MHz

Contact Plating :

Gold

Current - Collector Cutoff (Max) :

500pA

Height :

4.7mm

RoHS Status :

ROHS3 Compliant

Collector Emitter Breakdown Voltage :

40V

REACH SVHC :

No SVHC

Transistor Type :

2 NPN (Dual) Matched Pair

Collector Emitter Voltage (VCEO) :

40V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Diameter :

9.4mm

Collector Emitter Saturation Voltage :

50mV

Gain Bandwidth Product :

200MHz

Lead Free :

Contains Lead

Number of Pins :

6

Transition Frequency :

200MHz

Transistor Application :

AMPLIFIER

Pin Count :

6

Packaging :

Box

Mount :

Through Hole

Package / Case :

TO-78-6 Metal Can

Case Connection :

SUBSTRATE

Transistor Element Material :

SILICON

Collector Base Voltage (VCBO) :

40V

Element Configuration :

Dual

Mounting Type :

Through Hole

ECCN Code :

EAR99

Lifecycle Status :

Production (Last Updated: 1 week ago)