KSP10BU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - RF

Collector Emitter Voltage (VCEO) :

25V

Height :

4.58mm

Max Collector Current :

50mA

Number of Pins :

3

Weight :

179mg

Width :

3.86mm

Mounting Type :

Through Hole

Number of Terminations :

3

Radiation Hardening :

No

Terminal Position :

BOTTOM

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 4mA 10V

Lead Free :

Lead Free

Mount :

Through Hole

Published :

2002

ECCN Code :

EAR99

Operating Temperature :

150°C TJ

Gain Bandwidth Product :

650MHz

Collector-Base Capacitance-Max :

0.7pF

Packaging :

Bulk

Factory Lead Time :

6 Weeks

Collector Base Voltage (VCBO) :

30V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

25V

Transistor Type :

NPN

Collector Emitter Saturation Voltage :

500mV

Current Rating :

100mA

Transistor Element Material :

SILICON

Number of Elements :

1

Power Dissipation :

350mW

REACH SVHC :

No SVHC

hFE Min :

60

Lifecycle Status :

ACTIVE (Last Updated: 11 hours ago)

Element Configuration :

Single

Transition Frequency :

650MHz

Emitter Base Voltage (VEBO) :

3V

RoHS Status :

ROHS3 Compliant

Length :

4.58mm

Collector Emitter Breakdown Voltage :

25V

Max Power Dissipation :

350mW

Polarity/Channel Type :

NPN

Base Part Number :

KSP10

Frequency :

650MHz

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)