KSP13BU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector Cutoff (Max) :

100nA ICBO

Lifecycle Status :

ACTIVE (Last Updated: 12 hours ago)

Polarity :

NPN

Transition Frequency :

125MHz

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

JESD-609 Code :

e3

Number of Pins :

3

Published :

2002

Max Power Dissipation :

625mW

Lead Free :

Lead Free

Max Collector Current :

500mA

Terminal Finish :

Tin (Sn)

Base Part Number :

KSP13

Terminal Position :

BOTTOM

Voltage - Rated DC :

30V

Transistor Type :

NPN - Darlington

Weight :

179mg

hFE Min :

10000

Collector Emitter Breakdown Voltage :

30V

Collector Emitter Saturation Voltage :

1.5V

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

6 Weeks

Emitter Base Voltage (VEBO) :

10V

Height :

4.58mm

Operating Temperature :

150°C TJ

Collector Emitter Voltage (VCEO) :

30V

Packaging :

Bulk

Pbfree Code :

yes

Number of Terminations :

3

Current Rating :

500mA

Number of Elements :

1

Radiation Hardening :

No

Mount :

Through Hole

Transistor Element Material :

SILICON

Frequency - Transition :

125MHz

Collector Base Voltage (VCBO) :

30V

Element Configuration :

Single

ECCN Code :

EAR99

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

RoHS Status :

ROHS3 Compliant

Width :

3.86mm

Length :

4.58mm