IXTT30N50L2

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Mfr.Part #
IXTT30N50L2
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 500V 30A TO268
Stock
27,878
In Stock :
27,878

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Supplier Device Package :
TO-268
Product Status :
Active
Brand :
IXYS
Packaging :
Tube
Number of Elements :
1
JEDEC-95 Code :
TO-268AA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Temperature :
-55°C~150°C TJ
FET Type :
N-Channel
Power Dissipation-Max :
400W Tc
Threshold Voltage :
2.5V
Surface Mount :
yes
Power Dissipation-Max (Abs) :
400 W
Series :
Linear L2™
Manufacturer :
IXYS
Transistor Type :
1 N-Channel
Terminal Form :
Gull wing
Product Type :
MOSFET
Mount :
Surface Mount
Polarity/Channel Type :
N-Channel
Published :
2006
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
30A
Package Shape :
RECTANGULAR
ECCN Code :
EAR99
RoHS Status :
ROHS3 Compliant
RoHS :
Details
Mounting Type :
Surface Mount
Drain to Source Voltage (Vdss) :
500V
Drain Current-Max (Abs) (ID) :
30 A
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
Vgs (Max) :
±20V
Reach Compliance Code :
Unknown
Rds On (Max) @ Id, Vgs :
200m Ω @ 15A, 10V
Factory Lead Time :
24 Weeks
Maximum Operating Temperature :
+ 150 C
JESD-609 Code :
e3
Power Dissipation :
400W
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Terminals :
2
Drain-source On Resistance-Max :
0.2Ohm
Number of Channels :
1 Channel
FET Feature :
--
JESD-30 Code :
R-PSSO-G2
Terminal Position :
Single
Configuration :
SINGLE WITH BUILT-IN DIODE AND RESISTOR
Input Capacitance (Ciss) (Max) @ Vds :
8100pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Nominal Vgs :
2.5 V
Transistor Element Material :
SILICON
Pin Count :
4
Additional Feature :
AVALANCHE RATED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Package :
Tube
Transistor Polarity :
N-Channel
Power Dissipation (Max) :
400W (Tc)
REACH SVHC :
No SVHC
Avalanche Energy Rating (Eas) :
1500 mJ
Channel Mode :
Enhancement
DS Breakdown Voltage-Min :
500V
Terminal Finish :
PURE TIN
Number of Pins :
3
Pbfree Code :
yes
Mounting Style :
SMD/SMT
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
30A Tc
Minimum Operating Temperature :
- 55 C
Product Category :
MOSFET
Base Product Number :
IXTT30
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
2
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Pulsed Drain Current-Max (IDM) :
60A
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Case Connection :
DRAIN
Qualification Status :
Not Qualified
Datasheets
IXTT30N50L2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT30N50L2 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Number of Channels:1 Channel, Number of Pins:3, Number of Terminations:2, IXTT30N50L2 pinout, IXTT30N50L2 datasheet PDF, IXTT30N50L2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT30N50L2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT30N50L2


N-Channel Tube 200m Ω @ 15A, 10V ±20V 8100pF @ 25V 240nC @ 10V 500V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT30N50L2 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 8100pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 30A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 30 A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 2.5V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 500V in order to maintain normal operation.Operating this transistor requires a 500V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXTT30N50L2 Features


the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 30A
based on its rated peak drain current 60A.
a threshold voltage of 2.5V
a 500V drain to source voltage (Vdss)


IXTT30N50L2 Applications


There are a lot of IXYS
IXTT30N50L2 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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