IXTT110N10P

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Mfr.Part #
IXTT110N10P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 100V 110A TO268
Stock
15,411
In Stock :
15,411

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Element Material :
SILICON
Mount :
Surface Mount
Subcategory :
MOSFETs
Brand :
IXYS
Polarity/Channel Type :
N-Channel
Channel Mode :
Enhancement
Qualification Status :
Not Qualified
Surface Mount :
yes
JESD-609 Code :
e3
Operating Temperature :
-55°C~175°C TJ
Product Category :
MOSFET
Mounting Type :
Surface Mount
Base Product Number :
IXTT110
Drain to Source Voltage (Vdss) :
100V
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Style :
SMD/SMT
Product Status :
Active
ECCN Code :
EAR99
Additional Feature :
AVALANCHE RATED
JESD-30 Code :
R-PSSO-G2
Terminal Position :
Single
Input Capacitance (Ciss) (Max) @ Vds :
3550pF @ 25V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Configuration :
SINGLE WITH BUILT-IN DIODE
Pulsed Drain Current-Max (IDM) :
250A
FET Type :
N-Channel
Minimum Operating Temperature :
- 55 C
Avalanche Energy Rating (Eas) :
1000 mJ
Supplier Device Package :
TO-268
Power Dissipation-Max :
480W Tc
DS Breakdown Voltage-Min :
100V
Transistor Polarity :
N-Channel
Width :
14 mm
Terminal Finish :
Matte Tin (Sn)
Series :
PolarHT™
Number of Elements :
1
Number of Channels :
1 Channel
Package :
Tube
Pin Count :
4
Case Connection :
DRAIN
Continuous Drain Current (ID) :
110A
FET Feature :
--
RoHS :
Details
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminations :
2
Published :
2006
Height :
5.1 mm
Rise Time :
25 ns
Rds On (Max) @ Id, Vgs :
15m Ω @ 500mA, 10V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Pins :
3
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
110A Tc
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 10V
Number of Terminals :
2
Power Dissipation (Max) :
480W (Tc)
Terminal Form :
Gull wing
Transistor Type :
1 N-Channel
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Length :
16.05 mm
Pbfree Code :
yes
Maximum Operating Temperature :
+ 175 C
JEDEC-95 Code :
TO-268AA
RoHS Status :
ROHS3 Compliant
Drain-source On Resistance-Max :
0.015Ohm
Package Shape :
RECTANGULAR
Product Type :
MOSFET
Reach Compliance Code :
not_compliant
Vgs(th) (Max) @ Id :
5V @ 250μA
Manufacturer :
IXYS
Transistor Application :
SWITCHING
Packaging :
Tube
Datasheets
IXTT110N10P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT110N10P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Number of Channels:1 Channel, Number of Terminations:2, Number of Pins:3, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, IXTT110N10P pinout, IXTT110N10P datasheet PDF, IXTT110N10P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT110N10P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT110N10P


N-Channel Tube 15m Ω @ 500mA, 10V ±20V 3550pF @ 25V 110nC @ 10V 100V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT110N10P Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 1000 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 3550pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 110A.Peak drain current for this device is 250A, which is its maximum pulsed drain current.To maintain normal operation, the DS breakdown voltage should be kept above 100V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.

IXTT110N10P Features


the avalanche energy rating (Eas) is 1000 mJ
a continuous drain current (ID) of 110A
based on its rated peak drain current 250A.
a 100V drain to source voltage (Vdss)


IXTT110N10P Applications


There are a lot of IXYS
IXTT110N10P applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
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