IXTT10N100D

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

16.05 mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 10A, 10V

Minimum Operating Temperature :

- 55 C

RoHS Status :

ROHS3 Compliant

Supplier Device Package :

TO-268

Package Shape :

RECTANGULAR

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Product Status :

Active

Product Category :

MOSFET

Mounting Style :

SMD/SMT

Terminal Position :

Single

Continuous Drain Current (ID) :

10A

Power Dissipation (Max) :

400W (Tc)

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

10 A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

4

Drain to Source Breakdown Voltage :

1kV

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

20A

Series :

--

DS Breakdown Voltage-Min :

1000 V

Product Type :

MOSFET

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Polarity :

N-Channel

Reach Compliance Code :

not_compliant

Input Capacitance (Ciss) (Max) @ Vds :

2500pF @ 25V

Packaging :

Tube

Drain to Source Voltage (Vdss) :

1000V

Vgs (Max) :

±30V

Length :

14 mm

RoHS :

Details

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Fall Time (Typ) :

75 ns

Turn-Off Delay Time :

110 ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

400W Tc

Gate to Source Voltage (Vgs) :

30V

Manufacturer :

IXYS

FET Feature :

Depletion Mode

Rise Time :

85ns

Operating Temperature :

-55°C~150°C TJ

Channel Mode :

Depletion

Brand :

IXYS

Mounting Type :

Surface Mount

Transistor Type :

1 N-Channel

Type :

High Voltage MOSFET

Maximum Operating Temperature :

+ 150 C

Drain-source On Resistance-Max :

1.4 Ω

Element Configuration :

Single

Number of Channels :

1 Channel

Terminal Form :

Gull wing

Power Dissipation-Max (Abs) :

400 W

Surface Mount :

yes

Case Connection :

DRAIN

Base Product Number :

IXTT10

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Polarity/Channel Type :

N-Channel

Published :

2009

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn)

Package :

Tube

Number of Elements :

1

Configuration :

Single

JEDEC-95 Code :

TO-268AA

Number of Terminals :

2

Number of Terminations :

2

Qualification Status :

Not Qualified

Height :

5.1 mm

Transistor Element Material :

SILICON

Factory Lead Time :

24 Weeks

Power Dissipation :

400W

JESD-609 Code :

e3