IXTT10N100D

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Mfr.Part #
IXTT10N100D
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 1000V 10A TO268
Stock
27,988
In Stock :
27,988

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tube
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Current-Max (IDM) :
20A
Drain-source On Resistance-Max :
1.4 Ω
Drain to Source Voltage (Vdss) :
1000V
Rise Time :
85ns
Number of Terminals :
2
FET Feature :
Depletion Mode
Package Shape :
RECTANGULAR
Brand :
IXYS
DS Breakdown Voltage-Min :
1000 V
Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Number of Elements :
1
Continuous Drain Current (ID) :
10A
Reach Compliance Code :
not_compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Height :
5.1 mm
JESD-30 Code :
R-PSSO-G2
Polarity/Channel Type :
N-Channel
Pin Count :
4
FET Type :
N-Channel
Qualification Status :
Not Qualified
Product Status :
Active
Terminal Position :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Channel Mode :
Depletion
Minimum Operating Temperature :
- 55 C
Series :
--
Rds On (Max) @ Id, Vgs :
1.4 Ω @ 10A, 10V
Element Configuration :
Single
Vgs (Max) :
±30V
Supplier Device Package :
TO-268
Power Dissipation :
400W
Type :
High Voltage MOSFET
Fall Time (Typ) :
75 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
400W Tc
Power Dissipation (Max) :
400W (Tc)
Length :
14 mm
Number of Channels :
1 Channel
Maximum Operating Temperature :
+ 150 C
Base Product Number :
IXTT10
Surface Mount :
yes
Terminal Finish :
Matte Tin (Sn)
JESD-609 Code :
e3
RoHS :
Details
Transistor Element Material :
SILICON
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
RoHS Status :
ROHS3 Compliant
Input Capacitance (Ciss) (Max) @ Vds :
2500pF @ 25V
Drain Current-Max (Abs) (ID) :
10 A
Factory Lead Time :
24 Weeks
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
Operating Mode :
ENHANCEMENT MODE
Package :
Tube
Mount :
Surface Mount
Gate to Source Voltage (Vgs) :
30V
JEDEC-95 Code :
TO-268AA
Drain to Source Breakdown Voltage :
1kV
Published :
2009
Transistor Polarity :
N-Channel
Turn-Off Delay Time :
110 ns
Manufacturer :
IXYS
Transistor Type :
1 N-Channel
Mounting Style :
SMD/SMT
Power Dissipation-Max (Abs) :
400 W
Pbfree Code :
yes
Product Category :
MOSFET
Terminal Form :
Gull wing
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Number of Terminations :
2
Mounting Type :
Surface Mount
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Case Connection :
DRAIN
Width :
16.05 mm
Transistor Application :
SWITCHING
Product Type :
MOSFET
Datasheets
IXTT10N100D
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT10N100D from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Type:High Voltage MOSFET, Number of Channels:1 Channel, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Number of Terminations:2, Mounting Type:Surface Mount, IXTT10N100D pinout, IXTT10N100D datasheet PDF, IXTT10N100D amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT10N100D ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT10N100D


N-Channel Tube 1.4 Ω @ 10A, 10V ±30V 2500pF @ 25V 130nC @ 10V 1000V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT10N100D Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 2500pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 10A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 1kV, and this device has a drainage-to-source breakdown voltage of 1kVV.Drain current refers to the maximum continuous current a device can conduct, and it is 10 A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 110 ns.Peak drain current is 20A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 1000 V.For this transistor to work, a voltage 1000V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTT10N100D Features


a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 20A.
a 1000V drain to source voltage (Vdss)


IXTT10N100D Applications


There are a lot of IXYS
IXTT10N100D applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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