IXTT110N10L2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

3000 mJ

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Package Shape :

RECTANGULAR

Number of Terminations :

2

Drain Current-Max (Abs) (ID) :

110 A

Number of Terminals :

2

Pbfree Code :

yes

Power Dissipation :

600W

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Reach Compliance Code :

not_compliant

Drain to Source Voltage (Vdss) :

100V

ECCN Code :

EAR99

Rise Time :

130ns

Packaging :

Tube

Number of Channels :

1 Channel

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

Single

Published :

2010

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

300A

JESD-30 Code :

R-PSSO-G2

Pin Count :

4

Minimum Operating Temperature :

- 55 C

Series :

Linear L2™

JEDEC-95 Code :

TO-268AA

DS Breakdown Voltage-Min :

100 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Channel Mode :

Enhancement

Rds On (Max) @ Id, Vgs :

18m Ω @ 55A, 10V

Operating Mode :

ENHANCEMENT MODE

Product Type :

MOSFET

Power Dissipation-Max (Abs) :

600 W

Polarity/Channel Type :

N-Channel

Product Category :

MOSFET

Supplier Device Package :

TO-268

Manufacturer :

IXYS

Base Product Number :

IXTT110

Surface Mount :

yes

Turn-Off Delay Time :

99 ns

Package :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

10500pF @ 25V

Brand :

IXYS

Lead Free :

Lead Free

Number of Elements :

1

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Mounting Type :

Surface Mount

RoHS :

Details

Power Dissipation-Max :

600W Tc

Drain to Source Breakdown Voltage :

100V

Fall Time (Typ) :

24 ns

Factory Lead Time :

24 Weeks

FET Feature :

--

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

20V

Power Dissipation (Max) :

600W (Tc)

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Maximum Operating Temperature :

+ 150 C

Drain-source On Resistance-Max :

0.018 Ω

Transistor Polarity :

N-Channel

Transistor Element Material :

SILICON

Mounting Style :

SMD/SMT

FET Type :

N-Channel

Continuous Drain Current (ID) :

110A

Product Status :

Active

Transistor Type :

1 N-Channel

JESD-609 Code :

e3

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)