IXTT120N15P
- Mfr.Part #
- IXTT120N15P
- Manufacturer
- Littelfuse
- Package / Case
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 120A TO268
- Stock
- 2,840
- In Stock :
- 2,840
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Type :
- PolarHT Power MOSFET
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Drain to Source Voltage (Vdss) :
- 150V
- Drain to Source Breakdown Voltage :
- 150V
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 26 ns
- Rise Time :
- 42ns
- Package / Case :
- TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Factory Lead Time :
- 9 Weeks
- Length :
- 14 mm
- Packaging :
- Tube
- Mounting Style :
- SMD/SMT
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Terminations :
- 2
- Power Dissipation-Max :
- 600W Tc
- Qualification Status :
- Not Qualified
- Number of Channels :
- 1 Channel
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation :
- 600W
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Minimum Operating Temperature :
- - 55 C
- Drain-source On Resistance-Max :
- 0.016 Ω
- Package Shape :
- RECTANGULAR
- Manufacturer :
- IXYS
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Transistor Polarity :
- N-Channel
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Reach Compliance Code :
- not_compliant
- Continuous Drain Current (ID) :
- 120A
- Case Connection :
- DRAIN
- Product Status :
- Active
- Tradename :
- PolarHT
- Pin Count :
- 4
- Configuration :
- Single
- JEDEC-95 Code :
- TO-268AA
- Operating Temperature :
- -55°C~175°C TJ
- Published :
- 2006
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Type :
- 1 N-Channel
- Channel Mode :
- Enhancement
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Transistor Application :
- SWITCHING
- Surface Mount :
- yes
- Number of Terminals :
- 2
- Height :
- 5.1 mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Brand :
- IXYS
- DS Breakdown Voltage-Min :
- 150 V
- Package :
- Tube
- Power Dissipation (Max) :
- 600W (Tc)
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Category :
- MOSFET
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Terminal Position :
- Single
- Maximum Operating Temperature :
- + 175 C
- RoHS :
- Details
- Gate to Source Voltage (Vgs) :
- 20V
- Product Type :
- MOSFET
- Base Product Number :
- IXTT120
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4900pF @ 25V
- JESD-30 Code :
- R-PSSO-G2
- Turn-Off Delay Time :
- 85 ns
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 16m Ω @ 500mA, 10V
- Radiation Hardening :
- No
- Width :
- 16.05 mm
- Polarity/Channel Type :
- N-Channel
- Series :
- PolarHT™
- Subcategory :
- MOSFETs
- Pulsed Drain Current-Max (IDM) :
- 260A
- FET Feature :
- --
- Supplier Device Package :
- TO-268
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Datasheets
- IXTT120N15P

N-Channel Tube 16m Ω @ 500mA, 10V ±20V 4900pF @ 25V 150nC @ 10V 150V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
IXTT120N15P Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4900pF @ 25V.This device has a continuous drain current (ID) of [120A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=150V, the drain-source breakdown voltage is 150V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 85 ns.A maximum pulsed drain current of 260A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150 V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IXTT120N15P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 260A.
a 150V drain to source voltage (Vdss)
IXTT120N15P Applications
There are a lot of IXYS
IXTT120N15P applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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