IXTT120N15P

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Mfr.Part #
IXTT120N15P
Manufacturer
Littelfuse
Package / Case
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Datasheet
Download
Description
MOSFET N-CH 150V 120A TO268
Stock
2,840
In Stock :
2,840

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Type :
PolarHT Power MOSFET
Transistor Element Material :
SILICON
Avalanche Energy Rating (Eas) :
2000 mJ
Drain to Source Voltage (Vdss) :
150V
Drain to Source Breakdown Voltage :
150V
Pbfree Code :
yes
Fall Time (Typ) :
26 ns
Rise Time :
42ns
Package / Case :
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Factory Lead Time :
9 Weeks
Length :
14 mm
Packaging :
Tube
Mounting Style :
SMD/SMT
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminations :
2
Power Dissipation-Max :
600W Tc
Qualification Status :
Not Qualified
Number of Channels :
1 Channel
Additional Feature :
AVALANCHE RATED
Power Dissipation :
600W
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Minimum Operating Temperature :
- 55 C
Drain-source On Resistance-Max :
0.016 Ω
Package Shape :
RECTANGULAR
Manufacturer :
IXYS
Vgs(th) (Max) @ Id :
5V @ 250μA
Transistor Polarity :
N-Channel
Mounting Type :
Surface Mount
ECCN Code :
EAR99
Reach Compliance Code :
not_compliant
Continuous Drain Current (ID) :
120A
Case Connection :
DRAIN
Product Status :
Active
Tradename :
PolarHT
Pin Count :
4
Configuration :
Single
JEDEC-95 Code :
TO-268AA
Operating Temperature :
-55°C~175°C TJ
Published :
2006
Terminal Finish :
Matte Tin (Sn)
Terminal Form :
Gull wing
Operating Mode :
ENHANCEMENT MODE
Transistor Type :
1 N-Channel
Channel Mode :
Enhancement
JESD-609 Code :
e3
FET Type :
N-Channel
Transistor Application :
SWITCHING
Surface Mount :
yes
Number of Terminals :
2
Height :
5.1 mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Brand :
IXYS
DS Breakdown Voltage-Min :
150 V
Package :
Tube
Power Dissipation (Max) :
600W (Tc)
RoHS Status :
ROHS3 Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Category :
MOSFET
Number of Elements :
1
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
Element Configuration :
Single
Mount :
Surface Mount
Terminal Position :
Single
Maximum Operating Temperature :
+ 175 C
RoHS :
Details
Gate to Source Voltage (Vgs) :
20V
Product Type :
MOSFET
Base Product Number :
IXTT120
Vgs (Max) :
±20V
Input Capacitance (Ciss) (Max) @ Vds :
4900pF @ 25V
JESD-30 Code :
R-PSSO-G2
Turn-Off Delay Time :
85 ns
Lead Free :
Lead Free
Rds On (Max) @ Id, Vgs :
16m Ω @ 500mA, 10V
Radiation Hardening :
No
Width :
16.05 mm
Polarity/Channel Type :
N-Channel
Series :
PolarHT™
Subcategory :
MOSFETs
Pulsed Drain Current-Max (IDM) :
260A
FET Feature :
--
Supplier Device Package :
TO-268
Current - Continuous Drain (Id) @ 25°C :
120A Tc
Datasheets
IXTT120N15P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTT120N15P from Chip IC,where excellence meets affordability. This product stands out with its Type:PolarHT Power MOSFET, Package / Case:TO-268-3, D3Pak (2 Leads + Tab), TO-268AA, Number of Terminations:2, Number of Channels:1 Channel, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, IXTT120N15P pinout, IXTT120N15P datasheet PDF, IXTT120N15P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTT120N15P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTT120N15P


N-Channel Tube 16m Ω @ 500mA, 10V ±20V 4900pF @ 25V 150nC @ 10V 150V TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXTT120N15P Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 2000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 4900pF @ 25V.This device has a continuous drain current (ID) of [120A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=150V, the drain-source breakdown voltage is 150V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 85 ns.A maximum pulsed drain current of 260A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 150 V.In order to operate this transistor, a voltage of 150V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXTT120N15P Features


the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 85 ns
based on its rated peak drain current 260A.
a 150V drain to source voltage (Vdss)


IXTT120N15P Applications


There are a lot of IXYS
IXTT120N15P applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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