IXTK90N25L2

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Mfr.Part #
IXTK90N25L2
Manufacturer
Littelfuse
Package / Case
TO-264-3, TO-264AA
Datasheet
Download
Description
MOSFET N-CH 250V 90A TO264
Stock
396
In Stock :
396

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
Polarity/Channel Type :
N-Channel
Transistor Type :
1 N-Channel
Rise Time :
175 ns
Factory Lead Time :
28 Weeks
Brand :
IXYS
Terminal Position :
Single
Surface Mount :
No
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Channels :
1 Channel
Transistor Element Material :
SILICON
FET Feature :
--
Operating Temp Range :
-55C to 150C
Input Capacitance (Ciss) (Max) @ Vds :
23000pF @ 25V
Tradename :
Linear L2
Vgs (Max) :
±20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Rad Hardened :
No
Packaging :
Tube
DS Breakdown Voltage-Min :
250 V
Polarity :
N
Package Shape :
RECTANGULAR
Drain to Source Voltage (Vdss) :
250V
JESD-609 Code :
e1
Current - Continuous Drain (Id) @ 25°C :
90A Tc
Transistor Polarity :
N-Channel
Package Type :
TO-264
Manufacturer :
IXYS
Length :
20.29 mm
Operating Mode :
ENHANCEMENT MODE
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Threshold Voltage :
2V
Qualification Status :
Not Qualified
Avalanche Energy Rating (Eas) :
3000 mJ
Number of Pins :
3
Height :
26.59 mm
Operating Temperature :
-55°C~150°C TJ
Drain to Source Breakdown Voltage :
250V
Mount :
Through Hole
Pulsed Drain Current-Max (IDM) :
360 A
JESD-30 Code :
R-PSFM-T3
JEDEC-95 Code :
TO-264AA
Maximum Operating Temperature :
+ 150 C
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Product Number :
IXTK90
Lead Free :
Lead Free
Series :
Linear L2™
Continuous Drain Current :
90(A)
Nominal Vgs :
2 V
Power Dissipation (Max) :
960W (Tc)
Drive Voltage (Max Rds On,Min Rds On) :
10V
Product Category :
MOSFET
RoHS :
Details
Number of Elements :
1
Width :
5.31 mm
Case Connection :
DRAIN
Terminal Finish :
TIN SILVER COPPER
Drain-source On Resistance-Max :
0.033 Ω
RoHS Status :
ROHS3 Compliant
Operating Temperature Classification :
Military
Pin Count :
3
Drain-Source On-Volt :
250(V)
ECCN Code :
EAR99
Terminal Form :
THROUGH-HOLE
Supplier Device Package :
TO-264 (IXTK)
Mounting Type :
Through Hole
Package / Case :
TO-264-3, TO-264AA
Number of Terminations :
3
Mounting :
Through Hole
Element Configuration :
Single
Resistance :
33mOhm
Power Dissipation-Max :
960W Tc
Number of Terminals :
3
Continuous Drain Current (ID) :
90A
FET Type :
N-Channel
Vgs(th) (Max) @ Id :
4.5V @ 3mA
Power Dissipation-Max (Abs) :
960 W
Gate-Source Voltage (Max) :
20(V)
Product Status :
Active
Additional Feature :
AVALANCHE RATED
Gate to Source Voltage (Vgs) :
20V
Mounting Style :
Through Hole
Type :
Power MOSFET
Product Type :
MOSFET
Drain Current-Max (Abs) (ID) :
90 A
Reach Compliance Code :
Unknown
Configuration :
Single
Rds On (Max) @ Id, Vgs :
33m Ω @ 45A, 10V
Gate Charge (Qg) (Max) @ Vgs :
640nC @ 10V
Published :
2008
Package :
Tube
REACH SVHC :
No SVHC
Pbfree Code :
yes
Power Dissipation :
960W
Minimum Operating Temperature :
- 55 C
Transistor Application :
SWITCHING
Channel Mode :
Enhancement
Datasheets
IXTK90N25L2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTK90N25L2 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1 Channel, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Package / Case:TO-264-3, TO-264AA, Number of Terminations:3, Type:Power MOSFET, IXTK90N25L2 pinout, IXTK90N25L2 datasheet PDF, IXTK90N25L2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTK90N25L2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTK90N25L2


N-Channel Tube 33m Ω @ 45A, 10V ±20V 23000pF @ 25V 640nC @ 10V 250V TO-264-3, TO-264AA

IXTK90N25L2 Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 23000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 90A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Drain current refers to the maximum continuous current a device can conduct, and it is 90 A.Peak drain current is 360 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2V, which means that it will not activate any of its functions when its threshold voltage reaches 2V.Normal operation requires that the DS breakdown voltage remain above 250 V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXTK90N25L2 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 250V voltage
based on its rated peak drain current 360 A.
a threshold voltage of 2V
a 250V drain to source voltage (Vdss)


IXTK90N25L2 Applications


There are a lot of IXYS
IXTK90N25L2 applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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