IXTK90N25L2
- Mfr.Part #
- IXTK90N25L2
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 90A TO264
- Stock
- 396
- In Stock :
- 396
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Polarity/Channel Type :
- N-Channel
- Transistor Type :
- 1 N-Channel
- Rise Time :
- 175 ns
- Factory Lead Time :
- 28 Weeks
- Brand :
- IXYS
- Terminal Position :
- Single
- Surface Mount :
- No
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Number of Channels :
- 1 Channel
- Transistor Element Material :
- SILICON
- FET Feature :
- --
- Operating Temp Range :
- -55C to 150C
- Input Capacitance (Ciss) (Max) @ Vds :
- 23000pF @ 25V
- Tradename :
- Linear L2
- Vgs (Max) :
- ±20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Rad Hardened :
- No
- Packaging :
- Tube
- DS Breakdown Voltage-Min :
- 250 V
- Polarity :
- N
- Package Shape :
- RECTANGULAR
- Drain to Source Voltage (Vdss) :
- 250V
- JESD-609 Code :
- e1
- Current - Continuous Drain (Id) @ 25°C :
- 90A Tc
- Transistor Polarity :
- N-Channel
- Package Type :
- TO-264
- Manufacturer :
- IXYS
- Length :
- 20.29 mm
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Threshold Voltage :
- 2V
- Qualification Status :
- Not Qualified
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Number of Pins :
- 3
- Height :
- 26.59 mm
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Breakdown Voltage :
- 250V
- Mount :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 360 A
- JESD-30 Code :
- R-PSFM-T3
- JEDEC-95 Code :
- TO-264AA
- Maximum Operating Temperature :
- + 150 C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Product Number :
- IXTK90
- Lead Free :
- Lead Free
- Series :
- Linear L2™
- Continuous Drain Current :
- 90(A)
- Nominal Vgs :
- 2 V
- Power Dissipation (Max) :
- 960W (Tc)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Product Category :
- MOSFET
- RoHS :
- Details
- Number of Elements :
- 1
- Width :
- 5.31 mm
- Case Connection :
- DRAIN
- Terminal Finish :
- TIN SILVER COPPER
- Drain-source On Resistance-Max :
- 0.033 Ω
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature Classification :
- Military
- Pin Count :
- 3
- Drain-Source On-Volt :
- 250(V)
- ECCN Code :
- EAR99
- Terminal Form :
- THROUGH-HOLE
- Supplier Device Package :
- TO-264 (IXTK)
- Mounting Type :
- Through Hole
- Package / Case :
- TO-264-3, TO-264AA
- Number of Terminations :
- 3
- Mounting :
- Through Hole
- Element Configuration :
- Single
- Resistance :
- 33mOhm
- Power Dissipation-Max :
- 960W Tc
- Number of Terminals :
- 3
- Continuous Drain Current (ID) :
- 90A
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4.5V @ 3mA
- Power Dissipation-Max (Abs) :
- 960 W
- Gate-Source Voltage (Max) :
- 20(V)
- Product Status :
- Active
- Additional Feature :
- AVALANCHE RATED
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Style :
- Through Hole
- Type :
- Power MOSFET
- Product Type :
- MOSFET
- Drain Current-Max (Abs) (ID) :
- 90 A
- Reach Compliance Code :
- Unknown
- Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 45A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 640nC @ 10V
- Published :
- 2008
- Package :
- Tube
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Power Dissipation :
- 960W
- Minimum Operating Temperature :
- - 55 C
- Transistor Application :
- SWITCHING
- Channel Mode :
- Enhancement
- Datasheets
- IXTK90N25L2

N-Channel Tube 33m Ω @ 45A, 10V ±20V 23000pF @ 25V 640nC @ 10V 250V TO-264-3, TO-264AA
IXTK90N25L2 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 3000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 23000pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 90A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Drain current refers to the maximum continuous current a device can conduct, and it is 90 A.Peak drain current is 360 A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In this case, the threshold voltage of the transistor is 2V, which means that it will not activate any of its functions when its threshold voltage reaches 2V.Normal operation requires that the DS breakdown voltage remain above 250 V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTK90N25L2 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 90A
a drain-to-source breakdown voltage of 250V voltage
based on its rated peak drain current 360 A.
a threshold voltage of 2V
a 250V drain to source voltage (Vdss)
IXTK90N25L2 Applications
There are a lot of IXYS
IXTK90N25L2 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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