IXTK150N15P
- Mfr.Part #
- IXTK150N15P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 150A TO264
- Stock
- 35,180
- In Stock :
- 35,180
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Polarity :
- N-Channel
- RoHS :
- Details
- Manufacturer :
- IXYS
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Status :
- Active
- Supplier Device Package :
- TO-264 (IXTK)
- Maximum Operating Temperature :
- + 175 C
- Drain to Source Voltage (Vdss) :
- 150V
- Transistor Element Material :
- SILICON
- Transistor Type :
- 1 N-Channel
- Power Dissipation :
- 714W
- Minimum Operating Temperature :
- - 55 C
- Current - Continuous Drain (Id) @ 25°C :
- 150A Tc
- Pin Count :
- 3
- Element Configuration :
- Single
- Channel Mode :
- Enhancement
- Vgs (Max) :
- ±20V
- Polarity/Channel Type :
- N-Channel
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-264AA
- Rds On (Max) @ Id, Vgs :
- 13m Ω @ 500mA, 10V
- Published :
- 2006
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Rise Time :
- 33ns
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Input Capacitance (Ciss) (Max) @ Vds :
- 5800pF @ 25V
- Factory Lead Time :
- 28 Weeks
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Product Type :
- MOSFET
- Package Shape :
- RECTANGULAR
- Fall Time (Typ) :
- 28 ns
- RoHS Status :
- ROHS3 Compliant
- Type :
- PolarHT Power MOSFET
- Number of Terminals :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- PolarHT™
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- Mounting Style :
- Through Hole
- DS Breakdown Voltage-Min :
- 150 V
- Power Dissipation-Max :
- 714W Tc
- FET Type :
- N-Channel
- FET Feature :
- --
- Height :
- 26.59 mm
- Pulsed Drain Current-Max (IDM) :
- 340A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Subcategory :
- MOSFETs
- Width :
- 5.31 mm
- Package / Case :
- TO-264-3, TO-264AA
- Configuration :
- Single
- Reach Compliance Code :
- Unknown
- Terminal Form :
- THROUGH-HOLE
- Tradename :
- PolarHT
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Operating Temperature :
- -55°C~175°C TJ
- ECCN Code :
- EAR99
- Brand :
- IXYS
- Turn-Off Delay Time :
- 100 ns
- Packaging :
- Tube
- Package :
- Tube
- Drain-source On Resistance-Max :
- 0.013Ohm
- Continuous Drain Current (ID) :
- 150A
- Length :
- 20.29 mm
- Product Category :
- MOSFET
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation (Max) :
- 714W (Tc)
- Number of Channels :
- 1 Channel
- Additional Feature :
- AVALANCHE RATED
- JESD-609 Code :
- e1
- Surface Mount :
- No
- Number of Elements :
- 1
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Mounting Type :
- Through Hole
- JESD-30 Code :
- R-PSFM-T3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 150V
- Base Product Number :
- IXTK150
- Datasheets
- IXTK150N15P

N-Channel Tube 13m Ω @ 500mA, 10V ±20V 5800pF @ 25V 190nC @ 10V 150V TO-264-3, TO-264AA
IXTK150N15P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 2500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 5800pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 150A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.It is [100 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 340A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.The DS breakdown voltage should be maintained above 150 V to maintain normal operation.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTK150N15P Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 150A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 340A.
a 150V drain to source voltage (Vdss)
IXTK150N15P Applications
There are a lot of IXYS
IXTK150N15P applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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