IXTK120N20P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

200V

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Base Product Number :

IXTK120

Vgs (Max) :

±20V

Pin Count :

3

Minimum Operating Temperature :

- 55 C

Rise Time :

35ns

Fall Time (Typ) :

31 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

28 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

6000pF @ 25V

Lead Free :

Lead Free

Type :

PolarHT Power MOSFET

Power Dissipation :

714W

Mount :

Through Hole

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

22m Ω @ 500mA, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Product Type :

MOSFET

Product Status :

Active

Maximum Operating Temperature :

+ 175 C

Surface Mount :

No

Number of Terminations :

3

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Tradename :

PolarHT

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSFM-T3

Terminal Form :

THROUGH-HOLE

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Turn-Off Delay Time :

100 ns

Reach Compliance Code :

Compliant

Supplier Device Package :

TO-264 (IXTK)

Pulsed Drain Current-Max (IDM) :

300A

Product Category :

MOSFET

Brand :

IXYS

DS Breakdown Voltage-Min :

200 V

Qualification Status :

Not Qualified

Transistor Polarity :

N-Channel

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

RoHS :

Details

Package / Case :

TO-264-3, TO-264AA

Height :

26.16 mm

Continuous Drain Current (ID) :

120A

Configuration :

Single

Drain-source On Resistance-Max :

0.022Ohm

Element Configuration :

Single

Channel Mode :

Enhancement

Pbfree Code :

yes

Subcategory :

MOSFETs

Packaging :

Tube

Avalanche Energy Rating (Eas) :

2000 mJ

Published :

2006

Package :

Tube

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Length :

19.96 mm

Width :

5.13 mm

JESD-609 Code :

e1

Package Shape :

RECTANGULAR

Number of Channels :

1 Channel

Polarity/Channel Type :

N-Channel

Manufacturer :

IXYS

Case Connection :

DRAIN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminals :

3

ECCN Code :

EAR99

Power Dissipation-Max :

714W Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

200V

Mounting Style :

Through Hole

Power Dissipation (Max) :

714W (Tc)

Transistor Type :

1 N-Channel

Gate Charge (Qg) (Max) @ Vgs :

152nC @ 10V

Series :

PolarHT™

Additional Feature :

AVALANCHE RATED

JEDEC-95 Code :

TO-264AA

FET Feature :

--

FET Type :

N-Channel

Transistor Application :

SWITCHING