IXTK100N25P
- Mfr.Part #
- IXTK100N25P
- Manufacturer
- Littelfuse
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 100A TO264
- Stock
- 18
- In Stock :
- 18
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Maximum Operating Temperature :
- + 150 C
- Number of Channels :
- 1 Channel
- Published :
- 2006
- JESD-609 Code :
- e1
- Subcategory :
- MOSFETs
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminals :
- 3
- Mounting Type :
- Through Hole
- Transistor Type :
- 1 N-Channel
- Series :
- PolarHT™
- Drain-source On Resistance-Max :
- 0.027Ohm
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 2000 mJ
- Rds On (Max) @ Id, Vgs :
- 27m Ω @ 500mA, 10V
- Base Product Number :
- IXTK100
- Qualification Status :
- Not Qualified
- Gate Charge (Qg) (Max) @ Vgs :
- 185nC @ 10V
- Polarity/Channel Type :
- N-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Feature :
- --
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 100 ns
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 600W Tc
- Terminal Form :
- THROUGH-HOLE
- Rise Time :
- 26ns
- Number of Terminations :
- 3
- Surface Mount :
- No
- Brand :
- IXYS
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- DS Breakdown Voltage-Min :
- 250 V
- Factory Lead Time :
- 28 Weeks
- JEDEC-95 Code :
- TO-264AA
- Drain to Source Breakdown Voltage :
- 250V
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Manufacturer :
- IXYS
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Pulsed Drain Current-Max (IDM) :
- 250A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Product Type :
- MOSFET
- Supplier Device Package :
- TO-264 (IXTK)
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation (Max) :
- 600W (Tc)
- Case Connection :
- DRAIN
- Package / Case :
- TO-264-3, TO-264AA
- Drain to Source Voltage (Vdss) :
- 250V
- RoHS :
- Details
- Configuration :
- Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 6300pF @ 25V
- Gate to Source Voltage (Vgs) :
- 20V
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Product Status :
- Active
- Operating Mode :
- ENHANCEMENT MODE
- Package :
- Tube
- Height :
- 26.59 mm
- Pin Count :
- 3
- Package Shape :
- RECTANGULAR
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 100A
- Mounting Style :
- Through Hole
- Transistor Polarity :
- N-Channel
- Minimum Operating Temperature :
- - 55 C
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Channel Mode :
- Enhancement
- Length :
- 20.29 mm
- Additional Feature :
- AVALANCHE RATED
- Width :
- 5.31 mm
- Packaging :
- Tube
- Power Dissipation :
- 600W
- Product Category :
- MOSFET
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 28 ns
- Reach Compliance Code :
- Compliant
- Datasheets
- IXTK100N25P

N-Channel Tube 27m Ω @ 500mA, 10V ±20V 6300pF @ 25V 185nC @ 10V 250V TO-264-3, TO-264AA
IXTK100N25P Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 2000 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 6300pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 250V, and this device has a drainage-to-source breakdown voltage of 250VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 100 ns.Peak drain current is 250A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 250 V.For this transistor to work, a voltage 250V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
IXTK100N25P Features
the avalanche energy rating (Eas) is 2000 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 100 ns
based on its rated peak drain current 250A.
a 250V drain to source voltage (Vdss)
IXTK100N25P Applications
There are a lot of IXYS
IXTK100N25P applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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