IXTK110N20L2

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

N-Channel

Supplier Device Package :

TO-264 (IXTK)

Rise Time :

100 ns

Terminal Position :

Single

FET Feature :

--

Drain-source On Resistance-Max :

0.024Ohm

Manufacturer :

IXYS

Packaging :

Tube

Power Dissipation-Max (Abs) :

960 W

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

RoHS :

Details

FET Type :

N-Channel

ECCN Code :

EAR99

Power Dissipation :

960W

DS Breakdown Voltage-Min :

200V

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

3

Base Product Number :

IXTK110

Mounting Style :

Through Hole

Pulsed Drain Current-Max (IDM) :

275A

JEDEC-95 Code :

TO-264AA

Power Dissipation (Max) :

960W (Tc)

Gate Charge (Qg) (Max) @ Vgs :

500nC @ 10V

Product Category :

MOSFET

Tradename :

Linear L2

Number of Elements :

1

JESD-609 Code :

e1

Transistor Polarity :

N-Channel

Transistor Element Material :

SILICON

Published :

2009

Package / Case :

TO-264-3, TO-264AA

Number of Terminations :

3

Transistor Application :

AMPLIFIER

Number of Channels :

1 Channel

Surface Mount :

No

Power Dissipation-Max :

960W Tc

Product Status :

Active

Package Shape :

RECTANGULAR

Minimum Operating Temperature :

- 55 C

Current - Continuous Drain (Id) @ 25°C :

110A Tc

Length :

20.29 mm

Number of Terminals :

3

Package :

Tube

Drain Current-Max (Abs) (ID) :

110 A

Height :

26.59 mm

Pbfree Code :

yes

Factory Lead Time :

28 Weeks

Terminal Finish :

TIN SILVER COPPER

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

200V

Reach Compliance Code :

Compliant

Rds On (Max) @ Id, Vgs :

24m Ω @ 55A, 10V

Case Connection :

DRAIN

Lead Free :

Lead Free

Continuous Drain Current (ID) :

110A

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

5000 mJ

Transistor Type :

1 N-Channel

Vgs (Max) :

±20V

Mounting Type :

Through Hole

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Channel Mode :

Enhancement

Width :

5.31 mm

Product Type :

MOSFET

Mount :

Through Hole

Radiation Hardening :

No

Brand :

IXYS

Series :

Linear L2™

Input Capacitance (Ciss) (Max) @ Vds :

23000pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4.5V @ 3mA

Type :

LinearL2 Power MOSFET

Terminal Form :

THROUGH-HOLE

Maximum Operating Temperature :

+ 150 C

RoHS Status :

ROHS3 Compliant